Browsing by author "Chew, Soon Aik"
Now showing items 21-40 of 44
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Integration challenges and options of replacement high-k/metal gate technology for (Sub-)22nm technology nodes
Veloso, Anabela; Ragnarsson, Lars-Ake; Schram, Tom; Chew, Soon Aik; Boccardi, Guillaume; Thean, Aaron; Horiguchi, Naoto (2013) -
Novel junction design for NMOS Si bulk-FinFETs with extension doping by phosphorus doped silicate glass
Sasaki, Yuichiro; Ritzenthaler, Romain; Kimura, Y.; De Roest, David; Shi, Xiaoping; De Keersgieter, An; Kim, Min-Soo; Chew, Soon Aik; Kubicek, Stefan; Schram, Tom; Kikuchi, Yoshiaki; Demuynck, Steven; Veloso, Anabela; Vandervorst, Wilfried; Horiguchi, Naoto; Mocuta, Dan; Mocuta, Anda; Thean, Aaron (2015) -
On the scalability of doped hafnia thin films
Adelmann, Christoph; Schram, Tom; Chew, Soon Aik; Woicik, Joseph C.; Brizzi, Simone; Tallarida, Massimo; Schmeisser, Dieter; Horiguchi, Naoto; Van Elshocht, Sven; Ragnarsson, Lars-Ake (2014-03) -
Optimization of standard As ion implantation for NMOS Si bulk FinFETs extension
Sasaki, Yuichiro; De Keersgieter, An; Chew, Soon Aik; Chiarella, Thomas; Hellings, Geert; Togo Mitsuhiro,; Zschaetzsch Gerd,; Thean, Aaron; Horiguchi, Naoto (2013) -
Process control & integration options of RMG Technology for aggressively scaled devices
Veloso, Anabela; Higuchi, Yuichi; Chew, Soon Aik; Devriendt, Katia; Ragnarsson, Lars-Ake; Sebaai, Farid; Schram, Tom; Brus, Stephan; Vecchio, Emma; Kellens, Kristof; Rohr, Erika; Eneman, Geert; Simoen, Eddy; Cho, Moon Ju; Paraschiv, Vasile; Crabbe, Yvo; Shi, Xiaoping; Tielens, Hilde; Van Ammel, Annemie; Dekkers, Harold; Favia, Paola; Geypen, Jef; Bender, Hugo; Phatak, Anup; del Agua Borniquel, Jose Ignacio; Xu, K.; Allen, M.; Liu, C.; Xu, T.; Yoo, W.S.; Thean, Aaron; Horiguchi, Naoto (2012) -
Process options to enable (Sub-)1e-9 Ohm.cm2 contact resistivity on Si devices
Yu, Hao; Schaekers, Marc; Demuynck, Steven; Rosseel, Erik; Everaert, Jean-Luc; Chew, Soon Aik; Peter, Antony; Kubicek, Stefan; Barla, Kathy; Mocuta, Anda; Horiguchi, Naoto; Collaert, Nadine; Thean, Aaron; De Meyer, Kristin (2016) -
Reliability in gate first and gate last Ultra-Thin-EOT gate stacks assessed with CV-eMSM BTI characterization
Bury, Erik; Kaczer, Ben; Toledano Luque, Maria; Arimura, Hiroaki; Ragnarsson, Lars-Ake; Veloso, Anabela; Chew, Soon Aik; Togo, Mitsuhiro; Schram, Tom; Groeseneken, Guido (2012) -
Replacement metal contact using sacrificial ILD0 for wrap around contact in scaled FinFET technology
Chew, Soon Aik; Demuynck, Steven; Zhang, Liping; Pacco, Antoine; Devriendt, Katia; Teugels, Lieve; Hopf, Toby; Versluijs, Janko; Vrancken, Christa; Dangol, Anish; Altamirano Sanchez, Efrain; Mocuta, Dan; Horiguchi, Naoto (2018) -
RMG nMOS 1st process enabling 10x lower gate resistivity in N7 bulk FinFETs
Ragnarsson, Lars-Ake; Dekkers, Harold; Schram, Tom; Chew, Soon Aik; Parvais, Bertrand; Dehan, Morin; Devriendt, Katia; Tao, Zheng; Sebaai, Farid; Baerts, Christina; Van Elshocht, Sven; Yoshida, Naomi; Phatak, Anup; Lazik, Christoph; Brand, Adam; Clark, William; Fried, David; Mocuta, Dan; Barla, Kathy; Horiguchi, Naoto; Thean, Aaron (2015) -
RMG Technology Integration in FinFET Devices
Boccardi, Guillaume; Ritzenthaler, Romain; Togo, Mitsuhiro; Chiarella, Thomas; Kim, Min-Soo; Sasaki, Yuichiro; Veloso, Anabela; Chew, Soon Aik; Vecchio, Emma; Locorotondo, Sabrina; Devriendt, Katia; Ong, Patrick; Brus, Stephan; Horiguchi, Naoto; Thean, Aaron (2012) -
Scalability of doped cubic HfO2 films
Adelmann, Christoph; Opsomer, Karl; Brizzi, Simone; Tallarida, Massimo; Schmeisser, Dieter; Schram, Tom; Chew, Soon Aik; Horiguchi, Naoto; Van Elshocht, Sven; Ragnarsson, Lars-Ake (2013) -
Self-aligned double patterning of 1x nm FinFETs; a new device integration through the challenging geometry
Kim, Min-Soo; Vandeweyer, Tom; Altamirano Sanchez, Efrain; Dekkers, Harold; Van Besien, Els; Tsvetanova, Diana; Richard, Olivier; Chew, Soon Aik; Boccardi, Guillaume; Horiguchi, Naoto (2013) -
Strained germanium quantum well p-FinFETs fabricated on 45nm fin pitch using replacement channel, replacement metal gate and germanide-free local interconnect
Witters, Liesbeth; Mitard, Jerome; Loo, Roger; Demuynck, Steven; Chew, Soon Aik; Schram, Tom; Tao, Zheng; Hikavyy, Andriy; Sun, Jianwu; Milenin, Alexey; Mertens, Hans; Vrancken, Christa; Favia, Paola; Schaekers, Marc; Bender, Hugo; Horiguchi, Naoto; Langer, Robert; Barla, Kathy; Mocuta, Dan; Collaert, Nadine; Thean, Aaron (2015) -
Thermal and plasma treatments for improved (Sub-)1nm EOT RMG high-k last devices
Veloso, Anabela; Arimura, Hiroaki; Simoen, Eddy; Paraschiv, Vasile; Shi, Xiaoping; Cho, Moon Ju; Ragnarsson, Lars-Ake; Chew, Soon Aik; Vecchio, Emma; Sebaai, Farid; Roussel, Philippe; Santos, S. D.; Schram, Tom; Higuchi, Y.; Thean, Aaron; Horiguchi, Naoto (2012-12) -
Thermal and SF6-plasma treatments for improved (sub-)1nm EOT planar and FinFET-based RMG high-k last devices and enabling a simplified scalable CMOS integration scheme
Veloso, Anabela; Boccardi, Guillaume; Ragnarsson, Lars-Ake; Higuchi, Yuichi; Arimura, Hiroaki; Lee, Jae Woo; Simoen, Eddy; Cho, Moon Ju; Roussel, Philippe; Paraschiv, Vasile; Shi, Xiaoping; Schram, Tom; Chew, Soon Aik; Brus, Stephan; Dangol, Anish; Vecchio, Emma; Sebaai, Farid; Kellens, Kristof; Heylen, Nancy; Devriendt, Katia; Dekkers, Harold; Van Ammel, Annemie; Witters, Thomas; Conard, Thierry; Vaesen, Inge; Richard, Olivier; Bender, Hugo; Athimulam, Raja; Chiarella, Thomas; Thean, Aaron; Horiguchi, Naoto (2013) -
Titanium (germano-)silicides featuring 10-9 $Xcm2 contact resistivity and improved compatibility to advanced CMOS technology
Yu, Hao; Schaekers, Marc; Chew, Soon Aik; Everaert, Jean-Luc; Dabral, Ashish; Pourtois, Geoffrey; Horiguchi, Naoto; Mocuta, Dan; Collaert, Nadine; De Meyer, Kristin (2018) -
Titanium silicide on Si:P with precontact amorphization implantation treatment: contact resistivity approaching 1×10-9 Ohm-cm²
Yu, Hao; Schaekers, Marc; Peter, Antony; Pourtois, Geoffrey; Rosseel, Erik; Lee, Joon-Gon; Song, Woo-Bin; Shin, Keo Myoung; Everaert, Jean-Luc; Chew, Soon Aik; Demuynck, Steven; Kim, Daeyong; Barla, Kathy; Mocuta, Anda; Horiguchi, Naoto; Thean, Aaron; Collaert, Nadine; De Meyer, Kristin (2016) -
Towards high performance sub-10nm finW bulk FinFET technology
Chiarella, Thomas; Kubicek, Stefan; Rosseel, Erik; Ritzenthaler, Romain; Hikavyy, Andriy; Eyben, Pierre; De Keersgieter, An; Ragnarsson, Lars-Ake; Kim, Min-Soo; Chew, Soon Aik; Schram, Tom; Demuynck, Steven; Cupak, Miroslav; Rynders, Luc; Dehan, Morin; Horiguchi, Naoto; Mitard, Jerome; Mocuta, Dan; Mocuta, Anda; Thean, Aaron (2016) -
Ultralow resistive wrap around contact to scaled FinFET devices by using ALD-Ti contact metal
Chew, Soon Aik; Yu, Hao; Schaekers, Marc; Demuynck, Steven; Mannaert, Geert; Kunnen, Eddy; Rosseel, Erik; Hikavyy, Andriy; Dangol, Anish; De Meyer, Kristin; Mocuta, Dan; Horiguchi, Naoto; Leusink, Gert; Wajda, Cory; Hakamata, T; Hasegawa, T; Tapily, K; Clark, R (2017) -
Ultralow-resistivity CMOS contact scheme with pre-contact amorphization plus Ti (germano-)silicidation
Yu, Hao; Schaekers, Marc; Hikavyy, Andriy; Rosseel, Erik; Peter, Antony; Hollar, K.; Khaja, Fareen; Aderhold, W.; Date, Lucien; Mayur, A.J.; Lee, J.G.; Shin, Keo Myoung; Douhard, Bastien; Chew, Soon Aik; Demuynck, Steven; Kubicek, Stefan; Kim, Daeyong; Mocuta, Anda; Barla, Kathy; Horiguchi, Naoto; Collaert, Nadine; Thean, Aaron; De Meyer, Kristin (2016)