Browsing by author "Vandervorst, Wilfried"
Now showing items 1-20 of 1434
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0.5 nm EOT low leakage ALD SrTiO3 on TiN MIM capacitors for DRAM applications
Menou, Nicolas; Wang, Xin Peng; Kaczer, Ben; Polspoel, Wouter; Popovici, Mihaela Ioana; Opsomer, Karl; Pawlak, Malgorzata; Knaepen, W.; Detavernier, C.; Blomberg, T.; Pierreux, D.; Swerts, Johan; Maes, Jan; Favia, Paola; Bender, Hugo; Brijs, Bert; Vandervorst, Wilfried; Van Elshocht, Sven; Wouters, Dirk; Biesemans, Serge; Kittl, Jorge (2008) -
1mA/μm-ION strained SiGe45%-IFQW pFETs with raised and embedded S/D
Mitard, Jerome; Witters, Liesbeth; Hellings, Geert; Krom, Raymond; Franco, Jacopo; Eneman, Geert; Hikavyy, Andriy; Vincent, Benjamin; Loo, Roger; Favia, Paola; Dekkers, Harold; Altamirano Sanchez, Efrain; Vanderheyden, Annelies; Vanhaeren, Danielle; Eyben, Pierre; Takeoka, Shinji; Yamaguchi, Shinpei; Van Dal, Mark; Wang, Wei-E; Hong, Sug-Hun; Vandervorst, Wilfried; De Meyer, Kristin; Biesemans, Serge; Absil, Philippe; Horiguchi, Naoto; Hoffmann, Thomas Y. (2011) -
200mm CVD grown Si/SiGe resonant interband tunnel diodes optimized for high peak-to-valley current ratios
Ramesh, Anisha; Berger, Paul; Douhard, Bastien; Vandervorst, Wilfried; Loo, Roger (2012-06) -
2D profiling with atomic force microscopy
Trenkler, Thomas; De Wolf, Peter; Stephenson, Robert; Clarysse, Trudo; Hantschel, Thomas; Vandervorst, Wilfried (1999) -
3D dopant profiling in silicon nanowires
Fleischmann, Claudia; Melkonyan, Davit; Arnoldi, Laurent; Bogdanowicz, Janusz; Kumar, Arul; Veloso, Anabela; Vandervorst, Wilfried (2016) -
3D electrical characterization of CNT-based interconnects
Schulze, Andreas; Hantschel, Thomas; Dathe, Andre; Chiodarelli, Nicolo; Eyben, Pierre; Vandervorst, Wilfried (2011) -
3D imaging of atom probe tip shapes with atomic force microscopy
Fleischmann, Claudia; Paredis, Kristof; Melkonyan, Davit; Op de Beeck, Jonathan; Bogdanowicz, Janusz; Morris, Richard; Cuduvally, Ramya; Vandervorst, Wilfried (2018) -
3D imaging of Si FinFETs by combined HAADF-STEM and EDS tomography
Qiu, Yang; Van Marcke, Patricia; Richard, Olivier; Bender, Hugo; Vandervorst, Wilfried (2014) -
3D site specific sample preparation and analysis of 3D devices (Finfets) by atom probe tomography
Kambham, Ajay Kumar; Kumar, Arul; Gilbert, Matthieu; Vandervorst, Wilfried (2012) -
3D site specific sample preparation and analysis of 3D devices (FinFETs) by atom probe tomography
Vandervorst, Wilfried; Kambham, Ajay Kumar; Kumar, Arul; Gilbert, Matthieu (2013) -
3D-Atomprobe : facts, artifacts and applications in semiconductors
Vandervorst, Wilfried; Koelling, Sebastian; Gilbert, Matthieu; Kambham, Ajay Kumar (2010) -
3D-carrier profiling in FinFETs using scanning spreading resistance microscopy
Mody, Jay; Zschaetzsch, Gerd; Koelling, Sebastian; De Keersgieter, An; Eneman, Geert; Kambham, Ajay Kumar; Drijbooms, Chris; Schulze, Andreas; Chiarella, Thomas; Horiguchi, Naoto; Hoffmann, Thomas; Eyben, Pierre; Vandervorst, Wilfried (2011) -
3D-doping in Finfets and nanowires : fabrication and metrology challenges and solutions
Vandervorst, Wilfried; Schulze, Andreas; Eyben, Pierre; Zschaetzsch, Gerd; Koelling, Sebastian; Kumar, Arul; Mody, Jay; Gilbert, Matthieu (2011) -
45nm nMOSFET with metal gate on thin SiON driving 1150μA/μm and off-state of 10nA/μm
Henson, Kirklen; Lander, Rob; Demand, Marc; Dachs, Charles; Kaczer, Ben; Deweerd, Wim; Schram, Tom; Tokei, Zsolt; Hooker, Jacob; Cubaynes, Florence; Beckx, Stephan; Boullart, Werner; Coenegrachts, Bart; Vertommen, Johan; Richard, Olivier; Bender, Hugo; Vandervorst, Wilfried; Kaiser, M.; Everaert, Jean-Luc; Jurczak, Gosia; Biesemans, Serge (2004) -
A 0.314mm2 6T-SRAM cell built with tall triple-gate devices for 45nm node applications using 0.75NA 193nm lithography
Nackaerts, Axel; Ercken, Monique; Demuynck, Steven; Lauwers, Anne; Baerts, Christina; Bender, Hugo; Boullart, Werner; Collaert, Nadine; Degroote, Bart; Delvaux, Christie; de Marneffe, Jean-Francois; Dixit, Abhisek; De Meyer, Kristin; Hendrickx, Eric; Heylen, Nancy; Jaenen, Patrick; Laidler, David; Locorotondo, Sabrina; Maenhoudt, Mireille; Moelants, Myriam; Pollentier, Ivan; Ronse, Kurt; Rooyackers, Rita; Van Aelst, Joke; Vandenberghe, Geert; Vandervorst, Wilfried; Vandeweyer, Tom; Vanhaelemeersch, Serge; Van Hove, Marleen; Van Olmen, Jan; Verhaegen, Staf; Versluijs, Janko; Vrancken, Christa; Wiaux, Vincent; Jurczak, Gosia; Biesemans, Serge (2004-12) -
A 3D electrical characterization of single stacking faults in InP by conductive-AFM
Mannarino, Manuel; Celano, Umberto; Lu, Augustin; Chintala, Ravi Chandra; Paredis, Kristof; Vandervorst, Wilfried (2015) -
A Bottom-Up Volume Reconstruction Method for Atom Probe Tomography
Cools, Sigfried; Ling, Yu Ting; Bogdanowicz, Janusz; Fleischmann, Claudia; De Beenhouwer, Jan; Sijbers, Jan; Vandervorst, Wilfried (2022) -
A combined SPM/TOFSIMS tool to obtain real chemical 3D information
Spampinato, Valentina; Dialameh, Masoud; Fleischmann, Claudia; Franquet, Alexis; Conard, Thierry; Vandervorst, Wilfried (2017) -
A comparison of arsenic and phosphorus extension by room temperature and hot ion implantation for NMOS Si bulk-FinFET at N7 (7nm) technology relevant fin dimensions
Sasaki, Yuichiro; Ritzenthaler, Romain; De Keersgieter, An; Chiarella, Thomas; Kubicek, Stefan; Rosseel, Erik; Waite, Andrew; del Agua Borniquel, Jose Ignacio; Colombeau, Benjamin; Chew, Soon Aik; Kim, Min-Soo; Schram, Tom; Demuynck, Steven; Vandervorst, Wilfried; Horiguchi, Naoto; Mocuta, Dan; Mocuta, Anda; Thean, Aaron (2015-06) -
A comparison of spike, flash, SPER and laser annealing for 45nm CMOS
Lindsay, Richard; Pawlak, Bartek; Kittl, Jorge; Henson, Kirklen; Torregiani, Cristina; Giangrandi, Simone; Surdeanu, Radu; Vandervorst, Wilfried; Mayur, A.; Ross, J.; McCoy, S.; Gelpey, J.; Elliott, K.; Pagès, Xavier; Satta, Alessandra; Lauwers, Anne; Stolk, P.; Maex, Karen (2003)