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1mA/μm-ION strained SiGe45%-IFQW pFETs with raised and embedded S/D
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Authors
Mitard, Jerome
;
Witters, Liesbeth
;
Hellings, Geert
;
Krom, Raymond
;
Franco, Jacopo
;
Eneman, Geert
;
Hikavyy, Andriy
;
Vincent, Benjamin
;
Loo, Roger
;
Favia, Paola
;
Dekkers, Harold
;
Altamirano Sanchez, Efrain
;
Vanderheyden, Annelies
;
Vanhaeren, Danielle
;
Eyben, Pierre
;
Takeoka, Shinji
;
Yamaguchi, Shinpei
;
Van Dal, Mark
;
Wang, Wei-E
;
Hong, Sug-Hun
;
Vandervorst, Wilfried
;
De Meyer, Kristin
;
Biesemans, Serge
;
Absil, Philippe
;
Horiguchi, Naoto
;
Hoffmann, Thomas Y.
Conference
Symposium on VLSI Technology
Title
1mA/μm-ION strained SiGe45%-IFQW pFETs with raised and embedded S/D
Publication type
Proceedings paper
Embargo date
9999-12-31
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