Publication:
1mA/μm-ION strained SiGe45%-IFQW pFETs with raised and embedded S/D
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1 since deposited on 2021-10-19
Acq. date: 2026-01-09
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2053 since deposited on 2021-10-19
Acq. date: 2026-01-09
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1 since deposited on 2021-10-19
Acq. date: 2026-01-09
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2053 since deposited on 2021-10-19
Acq. date: 2026-01-09
Citations