Browsing by author "Conard, Thierry"
Now showing items 1-20 of 601
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3D analysis of intermetallic formation in blankets and micro-bumps.
Spampinato, Valentina; Franquet, Alexis; Barnes, Jean-Paul; Conard, Thierry (2019) -
A chemical role of refractory metal caps in Co silicidation: Evidence of SiO2 reduction by Ti cap
Kondoh, Eiichi; Conard, Thierry; Brijs, Bert; Jin, S.; Bender, Hugo; de Potter de ten Broeck, Muriel; Maex, Karen (1999) -
A combined SPM/TOFSIMS tool to obtain real chemical 3D information
Spampinato, Valentina; Dialameh, Masoud; Fleischmann, Claudia; Franquet, Alexis; Conard, Thierry; Vandervorst, Wilfried (2017) -
A comparative X-ray photoelectron spectroscopy and medium-energy ion-scattering study of ultra-thin, Hf-based high-k films
Sygellou, L; Ladas, S; Reading, M.A.; van den Berg, J.A.; Conard, Thierry; De Gendt, Stefan (2010-03) -
A controlled deposition of organic contamination and the removal with ozone based cleaning
Claes, Martine; De Gendt, Stefan; Kenens, Conny; Conard, Thierry; Bender, Hugo; Storm, Wolfgang; Bauer, T.; Lagrange, Sébastien; Mertens, Paul; Heyns, Marc (2001) -
A correlative ToF-SIMS/SPM methodology for probing 3D devices
Spampinato, Valentina; Dialameh, Masoud; Franquet, Alexis; Fleischmann, Claudia; Conard, Thierry; van der Heide, Paul; Vandervorst, Wilfried (2020) -
A Dy2O3-capped HfO2 dielectric and TaCx-based metals enabling low-Vt single-metal-single-dielectric gate stack
Chang, Vincent; Ragnarsson, Lars-Ake; Pourtois, Geoffrey; O'Connor, Robert; Adelmann, Christoph; Van Elshocht, Sven; Delabie, Annelies; Swerts, Johan; Van der Heyden, Nikolaas; Conard, Thierry; Cho, Hag-Ju; Akheyar, Amal; Mitsuhashi, Riichirou; Witters, Thomas; O'Sullivan, Barry; Pantisano, Luigi; Rohr, Erika; Lehnen, Peer; Kubicek, Stefan; Schram, Tom; De Gendt, Stefan; Absil, Philippe; Biesemans, Serge (2007) -
A holistic approach of SIMS analysis for advanced semiconductor structures
Franquet, Alexis; Spampinato, Valentina; Pirkl, Alexander; Kayser, Sven; Moellers, Rudolf; Conard, Thierry; Vandervorst, Wilfried; van der Heide, Paul (2019) -
A mathematical description of atomic layer deposition (ALD), and its application to the nucleation and growth of HfO2 gate dielectric layers
Alam, M.A.; Green, Martin; Ho, M.Y.; Vandervorst, Wilfried; Brijs, Bert; Conard, Thierry; Räisänen, P.I. (2002) -
A new scaling issue in the electrical behavior of damascene versus plasma-etched interconnects
Proost, Joris; Conard, Thierry; Boullart, Werner; Grillaert, Joost; Maex, Karen (1998) -
A novel concept for contact etch residue removal
Vos, Ingrid; Hellin, David; Demuynck, Steven; Richard, Olivier; Conard, Thierry; Vertommen, Johan; Boullart, Werner (2007) -
A quantitative adhesion study between contacting materials in Cu damascene structures
Lanckmans, Filip; Brongersma, Sywert; Varga, Istvan; Poortmans, Jef; Bender, Hugo; Conard, Thierry; Maex, Karen (2002) -
A record GmSAT/SSSAT and PBTI reliability in Si-passivated Ge nFinFETs by improved gate stack surface preparation
Arimura, Hiroaki; Cott, Daire; Boccardi, Guillaume; Loo, Roger; Wostyn, Kurt; Brus, Stephan; Capogreco, Elena; Opdebeeck, Ann; Witters, Liesbeth; Conard, Thierry; Suhard, Samuel; van Dorp, Dennis; Kenis, Karine; Ragnarsson, Lars-Ake; Mitard, Jerome; Holsteyns, Frank; De Heyn, Vincent; Mocuta, Dan; Collaert, Nadine; Horiguchi, Naoto (2019-06) -
A scientific framework for establishing ultrafast molecular dynamic research in imec's AttoLab
Galleni, Laura; Sajjadian, Faegheh; Conard, Thierry; Pollentier, Ivan; Dorney, Kevin; Holzmeier, Fabian; Witting Larsen, Esben; Escudero, Daniel; Pourtois, Geoffrey; van Setten, Michiel; van der Heide, Paul; Petersen, John (2023) -
A study of growth mechanism of TiN and WCN barrier films deposited by atomic layer deposition on different substrates
Satta, Alessandra; Schuhmacher, Jörg; Whelan, Caroline; Vandervorst, Wilfried; Brongersma, Sywert; Beyer, Gerald; Brijs, Bert; Conard, Thierry; Maex, Karen; Vantomme, Andre; Viitanen, M.M.; Brongersma, H.H. (2002) -
A Study of SiCN Wafer-to-Wafer Bonding and Impact of Wafer Warpage
Iacovo, Serena; D'have, Koen; Okudur, Oguzhan Orkut; De Vos, Joeri; Uhrmann, Thomas; Plach, Thomas; Conard, Thierry; Meersschaut, Johan; Bex, Pieter; Brems, Steven; Phommahaxay, Alain; Gonzalez, Mario; Witters, Liesbeth; Beyer, Gerald; Beyne, Eric (2023) -
A study of the influence of typical wet chemical treatments on the germanium wafer surface
Onsia, Bart; Conard, Thierry; De Gendt, Stefan; Heyns, Marc; Hoflijk, Ilse; Mertens, Paul; Meuris, Peter; Raskin, G.; Sioncke, Sonja; Teerlinck, I; Theuwis, A.; Van Steenbergen, Jan; Vinckier, Chris (2004) -
A study of the influence of typical wet chemical treatments on the germanium wafer surface
Onsia, Bart; Conard, Thierry; De Gendt, Stefan; Heyns, Marc; Hoflijk, Ilse; Mertens, Paul; Meuris, Peter; Raskin, G.; Sioncke, Sonja; Teerlinck, Ivo; Theuwis, A.; Van Steenbergen, Jan; Vinckier, Chris (2005) -
Achieving conduction band-edge effective work functions by La2O3 capping of hafnium silicates
Ragnarsson, Lars-Ake; Chang, Vincent; Yu, HongYu; Cho, Hag-Ju; Conard, Thierry; Yin, KaiMin; Delabie, Annelies; Swerts, Johan; Schram, Tom; De Gendt, Stefan; Biesemans, Serge (2007-06) -
Achieving reproducible data: examples from surface analysis in semiconductor technology
Conard, Thierry; van der Heide, Paul; Vanleenhove, Anja; Zborowski, Charlotte; Vandervorst, Wilfried (2019)