Browsing by author "Lehnen, Peer"
Now showing items 1-20 of 25
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A Dy2O3-capped HfO2 dielectric and TaCx-based metals enabling low-Vt single-metal-single-dielectric gate stack
Chang, Vincent; Ragnarsson, Lars-Ake; Pourtois, Geoffrey; O'Connor, Robert; Adelmann, Christoph; Van Elshocht, Sven; Delabie, Annelies; Swerts, Johan; Van der Heyden, Nikolaas; Conard, Thierry; Cho, Hag-Ju; Akheyar, Amal; Mitsuhashi, Riichirou; Witters, Thomas; O'Sullivan, Barry; Pantisano, Luigi; Rohr, Erika; Lehnen, Peer; Kubicek, Stefan; Schram, Tom; De Gendt, Stefan; Absil, Philippe; Biesemans, Serge (2007) -
Achieving low VT Ni-FUSI CMOS via lanthanide incorporation in the gate stack
Veloso, Anabela; Yu, HongYu; Lauwers, Anne; Chang, Shou-Zen; Adelmann, Christoph; Onsia, Bart; Demand, Marc; Brus, Stephan; Vrancken, Christa; Singanamalla, Raghunath; Lehnen, Peer; Kittl, Jorge; Kauerauf, Thomas; Vos, Rita; O'Sullivan, Barry; Van Elshocht, Sven; Mitsuhashi, Riichirou; Whittemore, G.; Yin, K.M.; Niwa, Masaaki; Hoffmann, Thomas; Absil, Philippe; Jurczak, Gosia; Biesemans, Serge (2007-09) -
Achieving low-VT Ni-FUSI CMOS via Lanthanide incorporation in the gate stack
Veloso, Anabela; Yu, HongYu; Lauwers, Anne; Chang, Shou-Zen; Adelmann, Christoph; Onsia, Bart; Demand, Marc; Brus, Stephan; Vrancken, Christa; Singanamalla, Raghunath; Lehnen, Peer; Kittl, Jorge; Kauerauf, Thomas; Vos, Rita; O'Sullivan, Barry; Van Elshocht, Sven; Mitsuhashi, Riichirou; Whittemore, G.; Yin, K.M.; Niwa, Masaaki; Hoffmann, Thomas; Absil, Philippe; Jurczak, Gosia; Biesemans, Serge (2008) -
Alternative high-k dielectrics for semiconductor applications
Van Elshocht, Sven; Adelmann, Christoph; Clima, Sergiu; Pourtois, Geoffrey; Conard, Thierry; Delabie, Annelies; Franquet, Alexis; Lehnen, Peer; Meersschaut, Johan; Menou, Nicolas; Popovici, Mihaela Ioana; Richard, Olivier; Schram, Tom; Wang, Xin Peng; Hardy, An; Dewulf, Daan; van Bael, M.K.; Blomberg, T.; Pieereux, D.; Swerts, J.; Maes, J.W.; Wouters, Dirk; De Gendt, Stefan; Kittl, Jorge (2008) -
Alternative high-k dielectrics for semiconductor applications
Van Elshocht, Sven; Adelmann, Christoph; Clima, Sergiu; Pourtois, Geoffrey; Conard, Thierry; Delabie, Annelies; Franquet, Alexis; Lehnen, Peer; Meersschaut, Johan; Menou, Nicolas; Popovici, Mihaela Ioana; Richard, Olivier; Schram, Tom; Wang, Xin Peng; Hardy, An; Dewulf, Daan; Van Bael, Marlies; Blomberg, T.; Pierreux, Dieter; Swerts, Johan; Maes, Jan; Wouters, Dirk; De Gendt, Stefan; Kittl, Jorge (2009) -
Anomalous positive-bias temperature instability of high-k/metal gate nMOSFET devices with Dy2O3 capping
O'Connor, Robert; Chang, Vincent; Pantisano, Luigi; Ragnarsson, Lars-Ake; Aoulaiche, Marc; O'Sullivan, Barry; Adelmann, Christoph; Van Elshocht, Sven; Lehnen, Peer; Yu, HongYu; Groeseneken, Guido (2008) -
AVD and MOCVD TaCN-based films for gate metal applications on high-k gate dielectrics
Karim, Zia; Barbar, Ghassan; Boissiere, Olivier; Lehnen, Peer; Lohe, Christoph; Seidel, Tom; Adelmann, Christoph; Conard, Thierry; O'Sullivan, Barry; Ragnarsson, Lars-Ake; Schram, Tom; Van Elshocht, Sven; De Gendt, Stefan (2007-10) -
Demonstration of low Vt Ni-FUSI N-MOSFETs with SiON dielectrics by using a Dy2O3 cap layer
Yu, HongYu; Chang, Shou-Zen; Veloso, Anabela; Lauwers, Anne; Adelmann, Christoph; Onsia, Bart; Lehnen, Peer; Kauerauf, Thomas; Brus, Stephan; Absil, Philippe; Biesemans, Serge (2007-11) -
Demonstration of metal-gated low Vt n-MOSFETs using a Poly-Si/TaN/Dy2O3/SiON gate stack with a scaled EOT value
Yu, HongYu; Singanamalla, Raghunath; Ragnarsson, Lars-Ake; Chang, Vincent; Cho, Hag-Ju; Mitsuhashi, Riichirou; Adelmann, Christoph; Van Elshocht, Sven; Lehnen, Peer; Chang, Shou-Zen; Yin, K.M.; Schram, Tom; Kubicek, Stefan; De Gendt, Stefan; Absil, Philippe; De Meyer, Kristin; Biesemans, Serge (2007) -
Dielectric properties of dysprosium- and scandium-doped hafnium dioxide thin films
Adelmann, Christoph; Venugopalan, Sriram; Van Elshocht, Sven; Lehnen, Peer; Conard, Thierry; De Gendt, Stefan (2007-10) -
DyScHfO as high-k gate dielectric: structural and electrical properties
Adelmann, Christoph; Van Elshocht, Sven; Lehnen, Peer; Conard, Thierry; Franquet, Alexis; Zhao, Chao; Ragnarsson, Lars-Ake; Chang, Vincent S.; Cho, Hag-Ju; Yu, HongYu; De Gendt, Stefan (2007) -
Electrical characterization of capacitors with AVD- deposited hafnium silicates as high-k gate dielectric
Van Elshocht, Sven; Weber, U.; Conard, Thierry; Kaushik, Vidya; Houssa, Michel; Hyun, Sangjin; Seitzinger, Bernard; Lehnen, Peer; Schuhmacher, M.; Lindner, J.; Caymax, Matty; De Gendt, Stefan; Heyns, Marc (2005) -
Equivalent oxide thickness reduction for high-k gate stacks by optimized rare-earth silicate reactions
Van Elshocht, Sven; Adelmann, Christoph; Lehnen, Peer; De Gendt, Stefan (2009) -
Flat-band voltage shift of Ruthenium gated stacks and its link with the formation of a thin Ruthenium oxide layer at the Ruthenium/dielectric interface
Li, Zilan; Schram, Tom; Pantisano, Luigi; Stesmans, Andre; Conard, Thierry; Shamuilia, Sheron; Afanasiev, Valeri; Akheyar, Amal; Van Elshocht, Sven; Brunco, David; Deweerd, Wim; Naoki, Yamada; Lehnen, Peer; De Gendt, Stefan; De Meyer, Kristin (2007-02) -
Growth of dysprosium-, scandium-, and hafnium-based third generation high-k dielectrics by atomic-vapor deposition
Adelmann, Christoph; Lehnen, Peer; Van Elshocht, Sven; Zhao, Chao; Brijs, Bert; Franquet, Alexis; Conard, Thierry; Roeckerath, Martin; Schubert, Jurgen; Boissiere, Olivier; Lohe, Christoph; De Gendt, Stefan (2007-10) -
Improving CMOS performance by AVD® grown high-k dielectrics and advanced metal electrodes
Weber, U.; Boissière, O.; Lindner, J.; Schuhmacher, M.; Lehnen, Peer; Manke, C.; Van Elshocht, Sven; Caymax, Matty; Cosnier, V.; McEntee, T. (2005) -
Low Vt Ni-FUSI CMOS technology using a DyO cap layer with either single or dual Ni-phases
Yu, HongYu; Chang, Shou-Zen; Veloso, Anabela; Lauwers, Anne; Adelmann, Christoph; Onsia, Bart; Van Elshocht, Sven; Singanamalla, Raghunath; Demand, Marc; Vos, Rita; Kauerauf, Thomas; Brus, Stephan; Shi, Xiaoping; Kubicek, Stefan; Vrancken, Christa; Mitsuhashi, Riichirou; Lehnen, Peer; Kittl, Jorge; Niwa, M.; Yin, K.M.; Hoffmann, Thomas; De Gendt, Stefan; Jurczak, Gosia; Absil, Philippe; Biesemans, Serge (2007) -
Mechanism of O2-anneal induced Vfb shifts of Ru gated stacks
Li, Zilan; Schram, Tom; Pantisano, Luigi; Stesmans, Andre; Conard, Thierry; Shamuilia, Sheron; Afanasiev, Valeri; Akheyar, Amal; Van Elshocht, Sven; Brunco, David; Deweerd, Wim; Naoki, Yamada; Lehnen, Peer; De Gendt, Stefan; De Meyer, Kristin (2007) -
Metal gate technology using a Dy2O3 dielectric cap approach for multiple-VT in NMOS FinFETs
Ferain, Isabelle; Son, Nak Jin; Witters, Liesbeth; Collaert, Nadine; Onsia, Bart; Kaczer, Ben; Kauerauf, Thomas; Adelmann, Christoph; Richard, Olivier; Favia, Paola; Bender, Hugo; Vos, Rita; Van Elshocht, Sven; Lehnen, Peer; San Tamer, Kemal; De Meyer, Kristin; Biesemans, Serge; Jurczak, Gosia (2007) -
Nitrogen profile and dielectric cap layer (Al2O3, Dy2O3, La2O3) engineering on Hf-silicate
Cho, Hag-Ju; Yu, HongYu; Ragnarsson, Lars-Ake; Chang, Vincent; Schram, Tom; O'Sullivan, Barry; Kubicek, Stefan; Mitsuhashi, Riichirou; Akheyar, Amal; Van Elshocht, Sven; Witters, Thomas; Delabie, Annelies; Adelmann, Christoph; Rohr, Erika; Singanamalla, Raghunath; Chang, Shou-Zen; Swerts, Johan; Lehnen, Peer; De Gendt, Stefan; Absil, Philippe; Biesemans, Serge (2007)