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Metal gate technology using a Dy2O3 dielectric cap approach for multiple-VT in NMOS FinFETs
Publication:
Metal gate technology using a Dy2O3 dielectric cap approach for multiple-VT in NMOS FinFETs
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Date
2007
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Ferain, Isabelle
;
Son, Nak Jin
;
Witters, Liesbeth
;
Collaert, Nadine
;
Onsia, Bart
;
Kaczer, Ben
;
Kauerauf, Thomas
;
Adelmann, Christoph
;
Richard, Olivier
;
Favia, Paola
;
Bender, Hugo
;
Vos, Rita
;
Van Elshocht, Sven
;
Lehnen, Peer
;
San Tamer, Kemal
;
De Meyer, Kristin
;
Biesemans, Serge
;
Jurczak, Gosia
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1928
since deposited on 2021-10-16
Acq. date: 2025-12-10
Citations
Metrics
Views
1928
since deposited on 2021-10-16
Acq. date: 2025-12-10
Citations