Publication:

Metal gate technology using a Dy2O3 dielectric cap approach for multiple-VT in NMOS FinFETs

Date

2007
Proceedings Paper
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dc.contributor.authorFerain, Isabelle
dc.contributor.authorSon, Nak Jin
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorCollaert, Nadine
dc.contributor.authorOnsia, Bart
dc.contributor.authorKaczer, Ben
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorAdelmann, Christoph
dc.contributor.authorRichard, Olivier
dc.contributor.authorFavia, Paola
dc.contributor.authorBender, Hugo
dc.contributor.authorVos, Rita
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorLehnen, Peer
dc.contributor.authorSan Tamer, Kemal
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorBiesemans, Serge
dc.contributor.authorJurczak, Gosia
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorOnsia, Bart
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorVos, Rita
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.date.accessioned2021-10-16T16:07:01Z
dc.date.available2021-10-16T16:07:01Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12152
dc.source.beginpage141
dc.source.conferenceIEEE International SOI conference
dc.source.conferencedate1/10/2007
dc.source.conferencelocationIndian Wells, CA USA
dc.source.endpage142
dc.title

Metal gate technology using a Dy2O3 dielectric cap approach for multiple-VT in NMOS FinFETs

dc.typeProceedings paper
dspace.entity.typePublication
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