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Achieving low-VT Ni-FUSI CMOS via Lanthanide incorporation in the gate stack
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Achieving low-VT Ni-FUSI CMOS via Lanthanide incorporation in the gate stack
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Date
2008
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Veloso, Anabela
;
Yu, HongYu
;
Lauwers, Anne
;
Chang, Shou-Zen
;
Adelmann, Christoph
;
Onsia, Bart
;
Demand, Marc
;
Brus, Stephan
;
Vrancken, Christa
;
Singanamalla, Raghunath
;
Lehnen, Peer
;
Kittl, Jorge
;
Kauerauf, Thomas
;
Vos, Rita
;
O'Sullivan, Barry
;
Van Elshocht, Sven
;
Mitsuhashi, Riichirou
;
Whittemore, G.
;
Yin, K.M.
;
Niwa, Masaaki
;
Hoffmann, Thomas
;
Absil, Philippe
;
Jurczak, Gosia
;
Biesemans, Serge
Journal
Solid-State Electronics
Abstract
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1974
since deposited on 2021-10-17
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last month
2
last week
Acq. date: 2026-01-08
Citations
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Views
1974
since deposited on 2021-10-17
5
last month
2
last week
Acq. date: 2026-01-08
Citations