Publication:

Achieving low-VT Ni-FUSI CMOS via Lanthanide incorporation in the gate stack

Date

2008
Journal article
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dc.contributor.authorVeloso, Anabela
dc.contributor.authorYu, HongYu
dc.contributor.authorLauwers, Anne
dc.contributor.authorChang, Shou-Zen
dc.contributor.authorAdelmann, Christoph
dc.contributor.authorOnsia, Bart
dc.contributor.authorDemand, Marc
dc.contributor.authorBrus, Stephan
dc.contributor.authorVrancken, Christa
dc.contributor.authorSinganamalla, Raghunath
dc.contributor.authorLehnen, Peer
dc.contributor.authorKittl, Jorge
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorVos, Rita
dc.contributor.authorO'Sullivan, Barry
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorMitsuhashi, Riichirou
dc.contributor.authorWhittemore, G.
dc.contributor.authorYin, K.M.
dc.contributor.authorNiwa, Masaaki
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorOnsia, Bart
dc.contributor.imecauthorDemand, Marc
dc.contributor.imecauthorBrus, Stephan
dc.contributor.imecauthorVrancken, Christa
dc.contributor.imecauthorVos, Rita
dc.contributor.imecauthorO'Sullivan, Barry
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.contributor.orcidimecO'Sullivan, Barry::0000-0002-9036-8241
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.date.accessioned2021-10-17T12:26:08Z
dc.date.available2021-10-17T12:26:08Z
dc.date.issued2008
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14735
dc.source.beginpage1303
dc.source.endpage1311
dc.source.issue9
dc.source.journalSolid-State Electronics
dc.source.volume52
dc.title

Achieving low-VT Ni-FUSI CMOS via Lanthanide incorporation in the gate stack

dc.typeJournal article
dspace.entity.typePublication
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