Publication:

Achieving low-VT Ni-FUSI CMOS via Lanthanide incorporation in the gate stack

Date

2008
Journal article
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Author(s)

Veloso, Anabela  
;
Yu, HongYu
;
Lauwers, Anne  
;
Chang, Shou-Zen
;
Adelmann, Christoph  
;
Onsia, Bart  
;
Demand, Marc  
;
Brus, Stephan  
;
Vrancken, Christa  
;
Singanamalla, Raghunath
;
Lehnen, Peer
;
Kittl, Jorge
;
Kauerauf, Thomas
;
Vos, Rita  
;
O'Sullivan, Barry  
;
Van Elshocht, Sven  
;
Mitsuhashi, Riichirou
;
Whittemore, G.
;
Yin, K.M.
;
Niwa, Masaaki
;
Hoffmann, Thomas
;
Absil, Philippe  
;
Jurczak, Gosia  
;
Biesemans, Serge  

Journal

Solid-State Electronics

Abstract

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1978 since deposited on 2021-10-17
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