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Demonstration of metal-gated low Vt n-MOSFETs using a Poly-Si/TaN/Dy2O3/SiON gate stack with a scaled EOT value
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Authors
Yu, HongYu
;
Singanamalla, Raghunath
;
Ragnarsson, Lars-Ake
;
Chang, Vincent
;
Cho, Hag-Ju
;
Mitsuhashi, Riichirou
;
Adelmann, Christoph
;
Van Elshocht, Sven
;
Lehnen, Peer
;
Chang, Shou-Zen
;
Yin, K.M.
;
Schram, Tom
;
Kubicek, Stefan
;
De Gendt, Stefan
;
Absil, Philippe
;
De Meyer, Kristin
;
Biesemans, Serge
Issue
7
Journal
IEEE Electron Device Letters
Volume
28
Title
Demonstration of metal-gated low Vt n-MOSFETs using a Poly-Si/TaN/Dy2O3/SiON gate stack with a scaled EOT value
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Journal article
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