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Demonstration of metal-gated low Vt n-MOSFETs using a Poly-Si/TaN/Dy2O3/SiON gate stack with a scaled EOT value

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1885 since deposited on 2021-10-16
Acq. date: 2025-12-08

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1885 since deposited on 2021-10-16
Acq. date: 2025-12-08

Citations