Publication:

Demonstration of metal-gated low Vt n-MOSFETs using a Poly-Si/TaN/Dy2O3/SiON gate stack with a scaled EOT value

Date

2007

Journal article

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Author(s)

;

Singanamalla, Raghunath

;

Ragnarsson, Lars-Ake

;

;

;

Mitsuhashi, Riichirou

;

Adelmann, Christoph

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Van Elshocht, Sven

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;

Chang, Shou-Zen

;

;

;

Kubicek, Stefan

;

De Gendt, Stefan

;

Absil, Philippe

;

De Meyer, Kristin

;

Biesemans, Serge

Journal

IEEE Electron Device Letters

Statistics

1887 since deposited on 2021-10-16

Acq. date: 2026-01-25