Achieving low VT Ni-FUSI CMOS via lanthanide incorporation in the gate stack

Thumbnail
View/open
Metadata
Show full item record
Authors
Veloso, Anabela; Yu, HongYu; Lauwers, Anne; Chang, Shou-Zen; Adelmann, Christoph; Onsia, Bart; Demand, Marc; Brus, Stephan; Vrancken, Christa; Singanamalla, Raghunath; Lehnen, Peer; Kittl, Jorge; Kauerauf, Thomas; Vos, Rita; O'Sullivan, Barry; Van Elshocht, Sven; Mitsuhashi, Riichirou; Whittemore, G.; Yin, K.M.; Niwa, Masaaki; Hoffmann, Thomas; Absil, Philippe; Jurczak, Gosia; Biesemans, Serge
Conference
Proceedings of the 37th European Solid-State Device Research Conference - ESSDERC
Title
Achieving low VT Ni-FUSI CMOS via lanthanide incorporation in the gate stack
Publication type
Proceedings paper
Embargo date
9999-12-31
Collections