Publication:

Achieving low VT Ni-FUSI CMOS via lanthanide incorporation in the gate stack

Date

2007-09
Proceedings Paper
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dc.contributor.authorVeloso, Anabela
dc.contributor.authorYu, HongYu
dc.contributor.authorLauwers, Anne
dc.contributor.authorChang, Shou-Zen
dc.contributor.authorAdelmann, Christoph
dc.contributor.authorOnsia, Bart
dc.contributor.authorDemand, Marc
dc.contributor.authorBrus, Stephan
dc.contributor.authorVrancken, Christa
dc.contributor.authorSinganamalla, Raghunath
dc.contributor.authorLehnen, Peer
dc.contributor.authorKittl, Jorge
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorVos, Rita
dc.contributor.authorO'Sullivan, Barry
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorMitsuhashi, Riichirou
dc.contributor.authorWhittemore, G.
dc.contributor.authorYin, K.M.
dc.contributor.authorNiwa, Masaaki
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorOnsia, Bart
dc.contributor.imecauthorDemand, Marc
dc.contributor.imecauthorBrus, Stephan
dc.contributor.imecauthorVrancken, Christa
dc.contributor.imecauthorVos, Rita
dc.contributor.imecauthorO'Sullivan, Barry
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.contributor.orcidimecO'Sullivan, Barry::0000-0002-9036-8241
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecBrus, Stephan::0000-0003-3554-0640
dc.contributor.orcidimecVos, Rita::0000-0003-2610-3406
dc.date.accessioned2021-10-16T21:17:37Z
dc.date.available2021-10-16T21:17:37Z
dc.date.embargo9999-12-31
dc.date.issued2007-09
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13157
dc.source.conferenceProceedings of the 37th European Solid-State Device Research Conference - ESSDERC
dc.source.conferencedate11/09/2007
dc.source.conferencelocationMünchen Germany
dc.title

Achieving low VT Ni-FUSI CMOS via lanthanide incorporation in the gate stack

dc.typeProceedings paper
dspace.entity.typePublication
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