Browsing by author "Deweerd, Wim"
Now showing items 1-20 of 37
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45nm nMOSFET with metal gate on thin SiON driving 1150μA/μm and off-state of 10nA/μm
Henson, Kirklen; Lander, Rob; Demand, Marc; Dachs, Charles; Kaczer, Ben; Deweerd, Wim; Schram, Tom; Tokei, Zsolt; Hooker, Jacob; Cubaynes, Florence; Beckx, Stephan; Boullart, Werner; Coenegrachts, Bart; Vertommen, Johan; Richard, Olivier; Bender, Hugo; Vandervorst, Wilfried; Kaiser, M.; Everaert, Jean-Luc; Jurczak, Gosia; Biesemans, Serge (2004) -
ALCVD hafnium silicates for low power gate stacks
Maes, Jan; Laitinen, O.; De Witte, Hilde; Deweerd, Wim; Delabie, Annelies; Conard, Thierry; Brijs, Bert; Wang, C. - G.; Velasco, H.; Wilk, G. (2004) -
ALD deposition of high-k and metal gate stacks for advanced CMOS applications
Heyns, Marc; Beckx, Stephan; Caymax, Matty; Claes, Martine; De Gendt, Stefan; Degraeve, Robin; Delabie, Annelies; Deweerd, Wim; Groeseneken, Guido; Hooker, Jacob; Houssa, Michel; Kwak, Dong Hwa; Lander, Rob; Lujan, Guilherme; Maes, Jan; Niwa, Masaaki; Pantisano, Luigi; Puurunen, R.; Ragnarsson, Lars-Ake; Rohr, Erika; Schram, Tom; Van Elshocht, Sven; Vandervorst, Wilfried (2004) -
Atomic layer deposition of hafnium silicate from HfCl4, SiCl4, and H2O
Fedorenko, Yanina; Swerts, Johan; Maes, Jan; Tois, E.; Haukka, S.; Wang, C.G; Wilk, G.; Delabie, Annelies; Deweerd, Wim; De Gendt, Stefan (2007) -
Electrical and physical characterization of MOSFETs with MBE grown La2HfO7 and HfO2 high-k dielectrics integrated in a conventional flow
Conard, Thierry; Pantisano, Luigi; Claes, Martine; Demand, Marc; Deweerd, Wim; De Gendt, Stefan; Houssa, Michel; Lujan, Guilherme; Ragnarsson, Lars-Ake; Rohr, Erika; Schram, Tom; Hooker, Jacob; Rittersma, Chris; Fompeyrinne, J.; Loquet, J.P. (2005) -
Engineering ALCVD HfSiO gate stacks for LSTP applications
Swerts, Johan; Deweerd, Wim; De Witte, Hilde; Maes, Jan; Wilk, Glenn; Delabie, Annelies (2005) -
Fabrication of MBE high-k MOSFETs in a standard CMOS flow
Pantisano, Luigi; Conard, Thierry; Schram, Tom; Deweerd, Wim; De Gendt, Stefan; Heyns, Marc; Rittersma, C.; Marchiori, C.; Sousa, M.; Fompeyrine, F.; Locquet, J.P. (2007) -
Flat-band voltage shift of Ruthenium gated stacks and its link with the formation of a thin Ruthenium oxide layer at the Ruthenium/dielectric interface
Li, Zilan; Schram, Tom; Pantisano, Luigi; Stesmans, Andre; Conard, Thierry; Shamuilia, Sheron; Afanasiev, Valeri; Akheyar, Amal; Van Elshocht, Sven; Brunco, David; Deweerd, Wim; Naoki, Yamada; Lehnen, Peer; De Gendt, Stefan; De Meyer, Kristin (2007-02) -
High-k gate stack engineering – towards meeting low standby power and high performance targets
De Gendt, Stefan; Brunco, David; Caymax, Matty; Conard, Thierry; Date, Lucien; Delabie, Annelies; Deweerd, Wim; Groeseneken, Guido; Houssa, Michel; Hyun, Sangjin; Kaushik, Vidya; Kubicek, Stefan; Maes, Jan; Pantisano, Luigi; Ragnarsson, Lars-Ake; Rohr, Erika; Schram, Tom; Shimamoto, Y.; Sleeckx, Erik; Vandervorst, Wilfried; Van Elshocht, Sven; Yamada, Naoki; Witters, Thomas; Zhao, Chao; Zimmerman, Paul; Heyns, Marc (2005) -
Implementation of high-k gate dielectrics - a status update
De Gendt, Stefan; Chen, Jerry; Carter, Richard; Cartier, Eduard; Caymax, Matty; Claes, Martine; Conard, Thierry; Delabie, Annelies; Deweerd, Wim; Kaushik, Vidya; Kerber, Andreas; Kubicek, Stefan; Maes, Jan; Niwa, M.; Pantisano, Luigi; Puurunen, Riikka; Ragnarsson, Lars-Ake; Schram, Tom; Shimamoto, Yasuhiro; Tsai, Wilman; Röhr, Erika; Van Elshocht, Sven; Witters, Thomas; Young, Edward; Zhao, Chao; Heyns, Marc (2003) -
Integration of high-k gate dielectrics - wet etch, cleaning and surface conditioning
De Gendt, Stefan; Beckx, Stephan; Caymax, Matty; Claes, Martine; Conard, Thierry; Delabie, Annelies; Deweerd, Wim; Kraus, Harald; Onsia, Bart; Paraschiv, Vasile; Puurunen, Riikka; Röhr, Erika; Snow, Jim; Tsai, Wilman; Van Doorne, Patrick; Van Elshocht, Sven; Vertommen, Johan; Witters, Thomas; Heyns, Marc (2003) -
Integration of high-K gate dielectrics - wet etch, cleaning and surface conditioning
De Gendt, Stefan; Beckx, Stephan; Caymax, Matty; Claes, Martine; Conard, Thierry; Delabie, Annelies; Deweerd, Wim; Hellin, David; Kraus, Harald; Onsia, Bart; Paraschiv, Vasile; Puurunen, Riikka; Rohr, Erika; Snow, Jim; Tsai, Wilman; Van Doorne, Patrick; Van Elshocht, Sven; Vertommen, Johan; Witters, Thomas; Heyns, Marc (2004) -
Integration of PVD ruthenium as a pMOS metal gate in scaled planar devices: workfunction and electrical performance on HfO2
Deweerd, Wim; Schram, Tom; Van Hoornick, Nausikaa; Witters, Thomas; Lisoni, Judit; Rohr, Erika; De Gendt, Stefan; Heyns, Marc; Schaekers, Marc; Richard, Olivier; Wickramanayaka, Sunil; Yamada, N.; Brunco, David (2005) -
Introducing novel metal gate materials for decananometer CMOS in the agile fab: a case study
Deweerd, Wim; Schram, Tom; Catana, Gabriela; Shamiryan, Denis; Garaud, Sylvain; Hellin, David; De Gendt, Stefan; Heyns, Marc; Wickramanayaka, S.; Kawashima, T.; Yamada, N.; Vertommen, Johan; Lander, Rob (2004) -
Issues, achievements and challenges towards intergration of high-k dielectrics
Heyns, Marc; Bender, Hugo; Caymax, Matty; Carter, R; Claes, Martine; Conard, Thierry; Boullart, Werner; De Gendt, Stefan; Degraeve, Robin; Deweerd, Wim; Groeseneken, Guido; Houssa, Michel; Kubicek, Stefan; Lujan, Guilherme; Nohira, H.; Pantisano, Luigi; Petry, Jasmine; Röhr, Erika; Vandervorst, Wilfried; Van Elshocht, Sven; Xu, Zhen; Zhao, Chao; Cartier, E.; Chen, J.; Cosnier, V.; Green, M.; Jang, S.E.; Kaushik, Vidya; Kerber, A.; Kluth, J.; Lin, S.; Tsai, Wilman; Young, Edward; Manabe, Y. (2002) -
Managing and controlling contamination in an advanced 8" CMOS pilot line
De Backker, Kris; Deweerd, Wim; Lebon, Hans (2001) -
Mechanism of O2-anneal induced Vfb shifts of Ru gated stacks
Li, Zilan; Schram, Tom; Pantisano, Luigi; Stesmans, Andre; Conard, Thierry; Shamuilia, Sheron; Afanasiev, Valeri; Akheyar, Amal; Van Elshocht, Sven; Brunco, David; Deweerd, Wim; Naoki, Yamada; Lehnen, Peer; De Gendt, Stefan; De Meyer, Kristin (2007) -
Molecular beam epitaxy for advanced gate stack materials and processes
Locquet, Jean-Pierre; Marchiori, Chiara; Sousa, M.; Siegwart, H.; Caimi, D.; Fompeyrine, Jean; Pantisano, Luigi; Claes, Martine; Conard, Thierry; Demand, Marc; Deweerd, Wim; De Gendt, Stefan; Heyns, Marc; Houssa, Michel; Aoulaiche, Marc; Lujan, Guilherme; Ragnarsson, Lars-Ake; Rohr, Erika; Schram, Tom; Hooker, Jacob; Rittersma, Chris; Furukawa, Yukiko; Seo, J.W.; dimoulas, A. (2005) -
MOSFET with La2HfO7 and HfO2 high-k dielectrics integrated in a conventional flow
Pantisano, Luigi; Conard, Thierry; Claes, Martine; Demand, Marc; Deweerd, Wim; De Gendt, Stefan; Heyns, Marc; Houssa, Michel; Aoulaiche, Marc; Lujan, Guilherme; Ragnarsson, Lars-Ake; Rohr, Erika; Schram, Tom; Hooker, Jacob; Rittersma, Chris; Fompereyne, Jean; Locquet, Jean-Pierre; dimoulas, A. (2005) -
Nitrided hafnium silicates for gate dielectrics
Wang, C.G.; Velasco, H.; Verghese, M.; Shero, E.; Wilk, G.; Maes, Jan; Laitinen, O.; Deweerd, Wim; Delabie, Annelies; Opila, R.L.; Mathew, A.; Demirkan, K.; Morais, J.; Baumvol, I.J.R. (2004)