Browsing by author "Brunco, David"
Now showing items 1-20 of 65
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15nm-WFIN high-performance low-defectivity strained-germanium pFinFETs with low temperature STI-last process
Mitard, Jerome; Witters, Liesbeth; Loo, Roger; Lee, Seung Hun; Sun, J.W.; Franco, Jacopo; Ragnarsson, Lars-Ake; Brand, A.; Lu, X.; Yoshido, N.; Eneman, Geert; Brunco, David; Vorderwestner, M.; Storck, P.; Milenin, Alexey; Hikavyy, Andriy; Waldron, Niamh; Favia, Paola; Vanhaeren, Danielle; Vanderheyden, Annelies; Richard, Olivier; Mertens, Hans; Arimura, Hiroaki; Sioncke, Sonja; Vrancken, Christa; Bender, Hugo; Eyben, Pierre; Barla, Kathy; Lee, Sun Ghil; Horiguchi, Naoto; Collaert, Nadine; Thean, Aaron (2014) -
Analysis of junction leakage in advanced germanium p+/n junctions
Eneman, Geert; Sicart i Casain, Oriol; Simoen, Eddy; Brunco, David; De Jaeger, Brice; Satta, Alessandra; Nicholas, Gareth; Claeys, Cor; Meuris, Marc; Heyns, Marc (2007) -
Atomic layer deposition as an enabling technology for fabrication of germanium MOS transistor
Eneman, Geert; Delabie, Annelies; Van Elshocht, Sven; De Jaeger, Brice; Nicholas, Gareth; Martens, Koen; Brunco, David; Zimmerman, Paul; Houssa, Michel; Pourtois, Geoffrey; Kaczer, Ben; Leys, Frederik; Winderickx, Gillis; Huyghebaert, Cedric; Terzieva, Valentina; Loo, Roger; Caymax, Matty; Meuris, Marc; Heyns, Marc (2007) -
Atomic layer deposition of hafnium oxide on Ge and GaAs substrates: precursors and surface preparation
Delabie, Annelies; Brunco, David; Conard, Thierry; Favia, Paola; Bender, Hugo; Franquet, Alexis; Sioncke, Sonja; Vandervorst, Wilfried; Van Elshocht, Sven; Heyns, Marc; Meuris, Marc; Kim, Eunji; McIntyre, Paul C.; Saraswat, Krishna C.; LeBeau, James M.; Cagnon, Joel; Stemmer, Susanne; Tsai, Wilman (2008) -
Atomic layer deposition of high-k dielectric layers on Ge and III-V MOS channels
Delabie, Annelies; Alian, AliReza; Bellenger, Florence; Brammertz, Guy; Brunco, David; Caymax, Matty; Conard, Thierry; Franquet, Alexis; Houssa, Michel; Sioncke, Sonja; Van Elshocht, Sven; van Hemmen, J.L.; Keuning, W.; Kessels, W.M.M.; Afanas'ev, V.V.; Stesmans, Andre; Heyns, Marc; Meuris, Marc (2008) -
Atomic layer deposition of high-k dielectric layers on Ge and III-V MOS channels
Delabie, Annelies; Caymax, Matty; Bellenger, Florence; Brammertz, Guy; Conard, Thierry; Houssa, Michel; Sioncke, Sonja; Van Elshocht, Sven; Heyns, Marc; Meuris, Marc; Brunco, David; van Hemmen, J.L.; Keuning, W.; Kessels, W.M.M.; Afanas'ev, V.V.; Stesmans, Andre (2008) -
Band offsets in biaxially stressed SiGe layers for arbitrary orientations
Eneman, Geert; Roussel, Philippe; Brunco, David; Collaert, Nadine; Mocuta, Anda; Thean, Aaron (2016) -
Benefits and side effects of high temperature anneal used to reduce threading dislocation defects in epitaxial Ge Layers on Si substrates
Terzieva, Valentina; Souriau, Laurent; Caymax, Matty; Brunco, David; Moussa, Alain; Van Elshocht, Sven; Loo, Roger; Clemente, Francesca; Satta, Alessandra; Meuris, Marc (2008) -
Benefits and side effects of high temperature anneal used to reduce threading dislocation defects in epitaxial Ge layers on Si substrates
Terzieva, Valentina; Souriau, Laurent; Caymax, Matty; Brunco, David; Moussa, Alain; Van Elshocht, Sven; Loo, Roger; Meuris, Marc (2007) -
Defect engineering aspects of advanced Ge process modules
Claeys, Cor; Simoen, Eddy; Opsomer, Karl; Brunco, David; Meuris, Marc (2008) -
Defects and electrical performance of germanium PMOS devices
Eneman, Geert; Simoen, Eddy; Yang, Rui; De Jaeger, Brice; Wang, Gang; Mitard, Jerome; Hellings, Geert; Brunco, David; Loo, Roger; De Meyer, Kristin; Claeys, Cor; Meuris, Marc; Heyns, Marc (2009) -
Defects, junction leakage and electrical performance of Ge pFET devices
Eneman, Geert; Simoen, Eddy; Yang, Rui; De Jaeger, Brice; Wang, Gang; Mitard, Jerome; Hellings, Geert; Brunco, David; Loo, Roger; De Meyer, Kristin; Caymax, Matty; Claeys, Cor; Meuris, Marc; Heyns, Marc (2009) -
Degradation and breakdown of 0.9 nm EOT SiO2/ ALD HfO2/metal gate stacks under positive constant voltage stress
Degraeve, Robin; Kauerauf, Thomas; Cho, Moon Ju; Zahid, Mohammed; Ragnarsson, Lars-Ake; Brunco, David; Kaczer, Ben; Roussel, Philippe; De Gendt, Stefan; Groeseneken, Guido (2005-12) -
Device assessment of the electrical activity of threading dislocations in strained Ge epitaxial layers
Simoen, Eddy; Brouwers, Gijs; Eneman, Geert; Bargallo Gonzalez, Mireia; De Jaeger, Brice; Mitard, Jerome; Brunco, David; Souriau, Laurent; Cody, N.; Thomas, S.; Meuris, Marc (2008) -
Distribution and generation of traps in SiO2/Al2O3 gate stacks
Crupi, I.; Degraeve, Robin; Govoreanu, Bogdan; Brunco, David; Roussel, Philippe; Van Houdt, Jan (2007) -
Etch rate study of germanium, GaAs, and InGaAs: a challenge in semiconductor processing.
Sioncke, Sonja; Brunco, David; Meuris, Marc; Van Steenbergen, Jan; Vrancken, Evi; Heyns, Marc (2008) -
Etch rates of Ge, GaAs and InGaAs in acids, bases and peroxide based mixtures
Sioncke, Sonja; Brunco, David; Meuris, Marc; Uwamahoro, Olivier; Van Steenbergen, Jan; Vrancken, Evi; Heyns, Marc (2008) -
Etching Ge, GaAs and InGaAs: A challenge in semiconductor processing
Sioncke, Sonja; Brunco, David; Meuris, Marc; Van Steenbergen, Jan; Vrancken, Evi; Heyns, Marc (2008) -
First demonstration of strained Ge-in-STI IFQW pFETs featuring raised SiGe75% S/D, replacement metal gate and germanided local interconnects
Mitard, Jerome; Witters, Liesbeth; Vincent, Benjamin; Franco, Jacopo; Favia, Paola; Hikavyy, Andriy; Eneman, Geert; Loo, Roger; Brunco, David; Kabir, Nafees; Bender, Hugo; Sebaai, Farid; Vos, Rita; Mertens, Paul; Milenin, Alexey; Vecchio, Emma; Ragnarsson, Lars-Ake; Collaert, Nadine; Thean, Aaron (2013) -
Flat-band voltage shift of Ruthenium gated stacks and its link with the formation of a thin Ruthenium oxide layer at the Ruthenium/dielectric interface
Li, Zilan; Schram, Tom; Pantisano, Luigi; Stesmans, Andre; Conard, Thierry; Shamuilia, Sheron; Afanasiev, Valeri; Akheyar, Amal; Van Elshocht, Sven; Brunco, David; Deweerd, Wim; Naoki, Yamada; Lehnen, Peer; De Gendt, Stefan; De Meyer, Kristin (2007-02)