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Benefits and side effects of high temperature anneal used to reduce threading dislocation defects in epitaxial Ge layers on Si substrates
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Authors
Terzieva, Valentina
;
Souriau, Laurent
;
Caymax, Matty
;
Brunco, David
;
Moussa, Alain
;
Van Elshocht, Sven
;
Loo, Roger
;
Meuris, Marc
Conference
5th International Conference on Silicon Epitaxy and Heterostructures - ICSI-5
Title
Benefits and side effects of high temperature anneal used to reduce threading dislocation defects in epitaxial Ge layers on Si substrates
Publication type
Oral presentation
Embargo date
9999-12-31
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