Publication:
Benefits and side effects of high temperature anneal used to reduce threading dislocation defects in epitaxial Ge layers on Si substrates
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1960 since deposited on 2021-10-16
2last month
Acq. date: 2026-05-19
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Statistics
Views
1960 since deposited on 2021-10-16
2last month
Acq. date: 2026-05-19
Citations