Publication:
Benefits and side effects of high temperature anneal used to reduce threading dislocation defects in epitaxial Ge layers on Si substrates
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1957 since deposited on 2021-10-16
1last month
Acq. date: 2026-03-17
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Statistics
Views
1957 since deposited on 2021-10-16
1last month
Acq. date: 2026-03-17
Citations