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Benefits and side effects of high temperature anneal used to reduce threading dislocation defects in epitaxial Ge layers on Si substrates
Publication:
Benefits and side effects of high temperature anneal used to reduce threading dislocation defects in epitaxial Ge layers on Si substrates
Date
2007
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15416.pdf
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Terzieva, Valentina
;
Souriau, Laurent
;
Caymax, Matty
;
Brunco, David
;
Moussa, Alain
;
Van Elshocht, Sven
;
Loo, Roger
;
Meuris, Marc
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1954
since deposited on 2021-10-16
Acq. date: 2025-10-23
Citations
Metrics
Views
1954
since deposited on 2021-10-16
Acq. date: 2025-10-23
Citations