Publication:
Benefits and side effects of high temperature anneal used to reduce threading dislocation defects in epitaxial Ge Layers on Si substrates
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1973 since deposited on 2021-10-17
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Acq. date: 2026-02-25
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Statistics
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1973 since deposited on 2021-10-17
1last month
1last week
Acq. date: 2026-02-25
Citations