Publication:

Benefits and side effects of high temperature anneal used to reduce threading dislocation defects in epitaxial Ge Layers on Si substrates

Date

2008
Journal article
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dc.contributor.authorTerzieva, Valentina
dc.contributor.authorSouriau, Laurent
dc.contributor.authorCaymax, Matty
dc.contributor.authorBrunco, David
dc.contributor.authorMoussa, Alain
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorLoo, Roger
dc.contributor.authorClemente, Francesca
dc.contributor.authorSatta, Alessandra
dc.contributor.authorMeuris, Marc
dc.contributor.imecauthorTerzieva, Valentina
dc.contributor.imecauthorSouriau, Laurent
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMoussa, Alain
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorMeuris, Marc
dc.contributor.orcidimecSouriau, Laurent::0000-0002-5138-5938
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.accessioned2021-10-17T11:12:08Z
dc.date.available2021-10-17T11:12:08Z
dc.date.embargo9999-12-31
dc.date.issued2008
dc.identifier.issn0040-6090
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14545
dc.source.beginpage172
dc.source.endpage177
dc.source.issue1
dc.source.journalThin Solid Films
dc.source.volume517
dc.title

Benefits and side effects of high temperature anneal used to reduce threading dislocation defects in epitaxial Ge Layers on Si substrates

dc.typeJournal article
dspace.entity.typePublication
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