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Conference contributions
Atomic layer deposition of high-k dielectric layers on Ge and III-V MOS channels
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Atomic layer deposition of high-k dielectric layers on Ge and III-V MOS channels
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Date
2008
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17377.pdf
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Delabie, Annelies
;
Caymax, Matty
;
Bellenger, Florence
;
Brammertz, Guy
;
Conard, Thierry
;
Houssa, Michel
;
Sioncke, Sonja
;
Van Elshocht, Sven
;
Heyns, Marc
;
Meuris, Marc
;
Brunco, David
;
van Hemmen, J.L.
;
Keuning, W.
;
Kessels, W.M.M.
;
Afanas'ev, V.V.
;
Stesmans, Andre
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Abstract
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1975
since deposited on 2021-10-17
2
last month
Acq. date: 2026-01-11
Citations
Metrics
Views
1975
since deposited on 2021-10-17
2
last month
Acq. date: 2026-01-11
Citations