Browsing by author "De Gendt, Stefan"

2D material integration in the semiconductor industry: Challenges and Solutions

Brems, Steven; Phommahaxay, Alain; Boulon, Marie-Emmanuelle; Verguts, Ken; Leonhardt, Alessandra; Kennes, Koen; Groven, Benjamin; Alessandri, Chiara; Wu, Cheng Han; Achra, Swati; Van Thourhout, Dries; Asselberghs, Inge; Pantouvaki, Marianna; Van Campenhout, Joris; Garello, Kevin; Parui, Subir; De Gendt, Stefan; Huyghebaert, Cedric (2019)

2D MoS2 film thickness impact on the efficiency of surface-doped devices

Lockhart de la Rosa, Cesar Javier; Arutchelvan, Goutham; Leonhardt, Alessandra; Huyghebaert, Cedric; Radu, Iuliana; Heyns, Marc; De Gendt, Stefan (2017)

2D TMDC aging: a case study of monolayer WS2 and mitigation strategies

Wyndaele, Pieter-Jan; de Marneffe, Jean-Francois; Slaets, R.; Groven, Benjamin; Franquet, Alexis; Bruener, P.; Grehl, T.; De Gendt, Stefan (2024)

45nm LSTP FET with FUSI gate on PVD-HfO2 with excellent drivability by advanced PDA treatment

Mitsuhashi, Riichirou; Yamamoto, Kazuhiko; Hayashi, S.; Rothschild, Aude; Kubicek, Stefan; Veloso, Anabela; Van Elshocht, Sven; Jurczak, Gosia; De Gendt, Stefan; Biesemans, Serge; Niwa, M. (2005)

A 35nm diameter vertical silicon nanowire short-gate tunnelFET

Vandooren, Anne; Rooyackers, Rita; Leonelli, Daniele; Iacopi, Francesca; De Gendt, Stefan; Verhulst, Anne; Heyns, Marc; Kunnen, Eddy; Nguyen, Duy; Demand, Marc; Ong, Patrick; Lee, Willie; Moonens, Jos; Richard, Olivier; Vandenberghe, William; Groeseneken, Guido (2009)

A chemisorbed interfacial layer for seeding atomic layer deposition on graphite

Brown, Anton; Greenwood, John; Lockhart de la Rosa, Cesar Javier; Gonzalez, Miriam C. Rodriguez; Verguts, Ken; Brems, Steven; Zhang, Haodong; Hirsch, Brandon E.; De Gendt, Stefan; Delabie, Annelies; Caymax, Matty; Teyssandier, Joan; De Feyter, Steven (2021)

A CMOS compatible carbon nanotube growth approach

Cott, Daire; Chiodarelli, Nicolo; Vereecken, Philippe; Vereecke, Bart; Van Elshocht, Sven; De Gendt, Stefan (2010)

A comparative X-ray photoelectron spectroscopy and medium-energy ion-scattering study of ultra-thin, Hf-based high-k films

Sygellou, L; Ladas, S; Reading, M.A.; van den Berg, J.A.; Conard, Thierry; De Gendt, Stefan (2010-03)

A comprehensive model for breakdown mechanism in HfO2 high-k gate stacks

Ranjan, R.; Pey, K.L.; Tung, C.H.; Tang, L.J.; Groeseneken, Guido; Bera, L.K.; De Gendt, Stefan (2004)

A controlled deposition of organic contamination and the removal with ozone based cleaning

Claes, Martine; De Gendt, Stefan; Kenens, Conny; Conard, Thierry; Bender, Hugo; Storm, Wolfgang; Bauer, T.; Lagrange, Sébastien; Mertens, Paul; Heyns, Marc (2001)

A detailed study on the growth of thin oxide layers on silicon using ozonated solutions

De Smedt, Frank; Vinckier, Chris; Cornelissen, Ingrid; De Gendt, Stefan; Heyns, Marc (2000)

A Dy2O3-capped HfO2 dielectric and TaCx-based metals enabling low-Vt single-metal-single-dielectric gate stack

Chang, Vincent; Ragnarsson, Lars-Ake; Pourtois, Geoffrey; O'Connor, Robert; Adelmann, Christoph; Van Elshocht, Sven; Delabie, Annelies; Swerts, Johan; Van der Heyden, Nikolaas; Conard, Thierry; Cho, Hag-Ju; Akheyar, Amal; Mitsuhashi, Riichirou; Witters, Thomas; O'Sullivan, Barry; Pantisano, Luigi; Rohr, Erika; Lehnen, Peer; Kubicek, Stefan; Schram, Tom; De Gendt, Stefan; Absil, Philippe; Biesemans, Serge (2007)