A comprehensive model for breakdown mechanism in HfO2 high-k gate stacks

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Authors
Ranjan, R.; Pey, K.L.; Tung, C.H.; Tang, L.J.; Groeseneken, Guido; Bera, L.K.; De Gendt, Stefan
Conference
Technical Digest International Electron Devices Meeting - IEDM
Title
A comprehensive model for breakdown mechanism in HfO2 high-k gate stacks
Publication type
Proceedings paper
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