Publication:
A comprehensive model for breakdown mechanism in HfO2 high-k gate stacks
Date
| dc.contributor.author | Ranjan, R. | |
| dc.contributor.author | Pey, K.L. | |
| dc.contributor.author | Tung, C.H. | |
| dc.contributor.author | Tang, L.J. | |
| dc.contributor.author | Groeseneken, Guido | |
| dc.contributor.author | Bera, L.K. | |
| dc.contributor.author | De Gendt, Stefan | |
| dc.contributor.imecauthor | Groeseneken, Guido | |
| dc.contributor.imecauthor | De Gendt, Stefan | |
| dc.contributor.orcidimec | De Gendt, Stefan::0000-0003-3775-3578 | |
| dc.date.accessioned | 2021-10-15T15:45:35Z | |
| dc.date.available | 2021-10-15T15:45:35Z | |
| dc.date.issued | 2004 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/9495 | |
| dc.source.beginpage | 725 | |
| dc.source.conference | Technical Digest International Electron Devices Meeting - IEDM | |
| dc.source.conferencedate | 13/12/2004 | |
| dc.source.conferencelocation | San Francisco USA | |
| dc.source.endpage | 728 | |
| dc.title | A comprehensive model for breakdown mechanism in HfO2 high-k gate stacks | |
| dc.type | Proceedings paper | |
| dspace.entity.type | Publication | |
| Files | ||
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