Browsing by author "Stesmans, Andre"

6Å EOT Si0.45Ge0.55 pMOSFET with optimized reliability (VDD=1V): Meeting the NBTI lifetime target at ultra-thin EOT

Franco, Jacopo; Kaczer, Ben; Eneman, Geert; Mitard, Jerome; Stesmans, Andre; Afanasiev, Valeri; Kauerauf, Thomas; Roussel, Philippe; Toledano-Luque, Maria; Cho, Moon Ju; Degraeve, Robin; Grasser, Tibor; Ragnarsson, Lars-Ake; Witters, Liesbeth; Tseng, Joshua; Takeoka, Shinji; Wang, Wei-E; Hoffmann, Thomas Y.; Groeseneken, Guido (2010)

A deep level transient spectroscopy study of hole traps in GexSe1-x-based layers for ovonic threshold switching selectors

Hsu, Brent; Simoen, Eddy; Lin, Dennis; Stesmans, Andre; Goux, Ludovic; Delhougne, Romain; Kar, Gouri Sankar (2019)

A deep level transient spectroscopy study of hole traps in GexSe1-x-based layers for ovonic threshold switching selectors

Hsu, Brent; Simoen, Eddy; Lin, Dennis; Stesmans, Andre; Goux, Ludovic; Delhougne, Romain; Carolan, Patrick; Bender, Hugo; Kar, Gouri Sankar (2020)

A first-principles study of the structural and electronic properties of III-V/thermal oxide interfaces

Scarrozza, Marco; Pourtois, Geoffrey; Houssa, Michel; Caymax, Matty; Stesmans, Andre; Meuris, Marc; Heyns, Marc (2009)

A microstructural study of the thermal stability of atomic layer deposited Al2O3 thin films

Nistor, L.; Richard, Olivier; Zhao, Chao; Bender, Hugo; Stesmans, Andre; Van Tendeloo, G. (2003-04)

A theoretical study of the initial oxidation of the GaAs(001)-beta2(2x4) surface

Scarrozza, Marco; Pourtois, Geoffrey; Houssa, Michel; Caymax, Matty; Stesmans, Andre; Meuris, Marc; Heyns, Marc (2009)

Adsorption of molecular oxygen on the reconstructed beta2(2x4)-GaAs(001) surface: a first-principles study

Scarrozza, Marco; Pourtois, Geoffrey; Houssa, Michel; Caymax, Matty; Meuris, Marc; Heyns, Marc; Stesmans, Andre (2009)

An electric field tunable energy band gap at silicene/(0001) ZnS interfaces

Houssa, Michel; van den Broek, Bas; Scalise, Emilio; Pourtois, Geoffrey; Afanasiev, Valeri; Stesmans, Andre (2013)

Analysis of charge pumping characteristics of single interface traps

Habas, Predrag; De Wolf, Ingrid; Groeseneken, Guido; Stesmans, Andre; Maes, Herman (1997)

Analysis of transferred MoS2 layers grown by MOCVD: evidence of Mo vacancy related defect formation

Schoenaers, Ben; Leonhardt, Alessandra; Nalin Mehta, Ankit; Stesmans, Andre; Chiappe, Daniele; Asselberghs, Inge; Radu, Iuliana; Huyghebaert, Cedric; De Gendt, Stefan; Houssa, Michel; Afanas'ev, Valeri V. (2020)

Atomic and electrical characterisation of amorphous silicon passivation layers

O'Sullivan, Barry; Thoan, N.H.; Jivanescu, M.; Pantisano, Luigi; Bearda, Twan; Dross, Frederic; Gordon, Ivan; Afanasiev, Valeri; Stesmans, Andre; Poortmans, Jef (2012)

Atomic layer deposition of high-k dielectric layers on Ge and III-V MOS channels

Delabie, Annelies; Alian, AliReza; Bellenger, Florence; Brammertz, Guy; Brunco, David; Caymax, Matty; Conard, Thierry; Franquet, Alexis; Houssa, Michel; Sioncke, Sonja; Van Elshocht, Sven; van Hemmen, J.L.; Keuning, W.; Kessels, W.M.M.; Afanas'ev, V.V.; Stesmans, Andre; Heyns, Marc; Meuris, Marc (2008)

Atomic layer deposition of high-k dielectric layers on Ge and III-V MOS channels

Delabie, Annelies; Caymax, Matty; Bellenger, Florence; Brammertz, Guy; Conard, Thierry; Houssa, Michel; Sioncke, Sonja; Van Elshocht, Sven; Heyns, Marc; Meuris, Marc; Brunco, David; van Hemmen, J.L.; Keuning, W.; Kessels, W.M.M.; Afanas'ev, V.V.; Stesmans, Andre (2008)