Browsing by author "Stesmans, Andre"
Now showing items 21-40 of 200
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Band alignment between (100)Si and complex rare-earth/transition metal oxides
Afanasiev, Valeri; Stesmans, Andre; Zhao, Chao; Caymax, Matty; Heeg,; Schubert,; Jia, Y.; Schlom, D.; Lucovsky, G. (2004) -
Band alignment between (100)Si and Hf-based complex metal oxides
Afanasiev, Valeri; Stesmans, Andre; Zhao, Chao; Caymax, Matty; Rittersma, Z.M.; Maes, Jan (2005) -
Band alignments in metal-oxide-silicon structures with atomic-layer deposited Al2O3 and ZrO2
Afanas'ev, V. V.; Houssa, Michel; Stesmans, Andre; Heyns, Marc (2002) -
Band offsets at interfaces of (100)InxGa1-xAs (0<x<0.53) with Al2O3 and HfO2
Afanasiev, Valeri; Stesmans, Andre; Brammertz, Guy; Delabie, Annelies; Sioncke, Sonja; O'Mahony, E; Povey, I.M.; Pemble, M.E.; O'Connor, E.; Hurley, P.K.; Newcomb, S.B. (2009) -
Band offsets at the (100)GaSb/Al2O3 interface from internal electron photoemission study
Afanasiev, Valeri; Chou, H. C.; Stesmans, Andre; Merckling, Clement; Sun, Xiao (2011) -
Can silicon behave like graphene? A first-principles study
Houssa, Michel; Pourtois, Geoffrey; Afanasiev, Valeri; Stesmans, Andre (2010) -
Characterization of thin films of the solid electrolyte LixMg1-2xAl2+xO4 (x = 0, 0.05, 0.15, 0.25)
Put, Brecht; Vereecken, Philippe; Mees, Maarten; Rosciano, Fabio; Radu, Iuliana; Stesmans, Andre (2015) -
Charge instability of atomic-layer deposited TaSiOx insulators on Si, InP, and In0.53Ga0.47As
Afanasiev, Valeri; Chou, H.Y.; Thoan, N.H.; Adelmann, Christoph; Lin, Dennis; Houssa, Michel; Stesmans, Andre (2012) -
Charge transfer effects in graphene-CdSe/ZnS quantum dots composites
Klekachev, Alexander; Asselberghs, Inge; Kuznetsov, Sergey; Cantoro, Mirco; Mun, Jeong Hun; Cho, Byung Jin; Hotta, Jun-ichi; Hofkens, Johan; van der Veen, Marleen; Stesmans, Andre; Heyns, Marc; De Gendt, Stefan (2012-10) -
Charge transfer phenomena in graphene-CdSe/ZnS quantum dots conjugated structures
Klekachev, Alexander; Asselberghs, Inge; Kuznetsov, Sergey; Cantoro, Mirco; Hun Mun, Jeong; Jin Cho, Byung; Hofkens, Johan; van der Veen, Marleen; Hadipour, Afshin; Stesmans, Andre; Heyns, Marc; De Gendt, Stefan (2012) -
Charge trapping in SiOx/ZrO2 and SiOx/TiO2 gate dielectric stacks
Houssa, Michel; Naili, Mohamed; Heyns, Marc; Stesmans, Andre (2001) -
Charge trapping in SiOx/ZrO2 gate dielectric stacks
Houssa, Michel; Naili, Mohamed; Heyns, Marc; Stesmans, Andre (2000) -
Charge trapping in very thin high-permittivity gate dielectric layers
Houssa, Michel; Stesmans, Andre; Naili, Mohamed; Heyns, Marc (2000) -
Combined effect of high temperature annealing and hydrogenation of a deposited silicon oxide for silicon surface passivation
Loozen, Xavier; Jivanescu, M.; Stesmans, Andre; Choulat, Patrick; John, Joachim; Conard, Thierry; Franquet, Alexis; Beaucarne, Guy; Van Kerschaver, Emmanuel (2009) -
Comparing n-and p-type polycrystalline silicon absorbers in thin-film solar cells
Deckers, Jan; Bourgeois, Emilie; Jivanescu, M.; Abass, A.; Van Gestel, Dries; Van Nieuwenhuysen, Kris; Douhard, Bastien; D'Haen, Jan; Nesladek, Milos; Manca, Jean; Gordon, Ivan; Bender, Hugo; Stesmans, Andre; Mertens, Robert; Poortmans, Jef (2015) -
Contact resistivities at graphene/MoS2 lateral heterojunctions
Houssa, Michel; Iordanidou, K.; Dabral, Ashish; Lu, A.; Pourtois, Geoffrey; Afanasiev, Valeri; Stesmans, Andre (2018) -
Control of metal/oxide electron barriers in CB-RAM cells by low work-function liners
De Stefano, Francesca; Afanasiev, Valeri; Houssa, Michel; Stesmans, Andre; Opsomer, Karl; Jurczak, Gosia; Goux, Ludovic (2013) -
Controlled sulfurization process for the synthesis of large area MoS2 films and MoS2-WS2 heterostructures
Chiappe, Daniele; Asselberghs, Inge; Sutar, Surajit; Iacovo, Serena; Afanasiev, Valeri; Stesmans, Andre; Balaji, Yashwanth; Peters, Lisanne; Heyne, Markus; Mannarino, Manuel; Vandervorst, Wilfried; Sayan, Safak; Huyghebaert, Cedric; Caymax, Matty; Heyns, Marc; De Gendt, Stefan; Radu, Iuliana; Thean, Aaron (2016) -
Correlation between interface traps and paramagnetic defects in c-Si/a-Si:H heterojunctions
Nguyen Hoang, Thoan; Jivanescu, Mihaela; O'Sullivan, Barry; Pantisano, Luigi; Gordon, Ivan; Afanas'ev, Valery; Stesmans, Andre (2012) -
Dangling bond defects in silicon-passivated strained-Si1xGex channel layers
Madia, Oreste; Kepa, Jacek; Afanas'ev, Valeri; Franco, Jacopo; Kaczer, Ben; Hikavyy, Andriy; Stesmans, Andre (2020)