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Mechanism of O2-anneal induced Vfb shifts of Ru gated stacks

dc.contributor.authorLi, Zilan
dc.contributor.authorSchram, Tom
dc.contributor.authorPantisano, Luigi
dc.contributor.authorStesmans, Andre
dc.contributor.authorConard, Thierry
dc.contributor.authorShamuilia, Sheron
dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorAkheyar, Amal
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorBrunco, David
dc.contributor.authorDeweerd, Wim
dc.contributor.authorNaoki, Yamada
dc.contributor.authorLehnen, Peer
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-16T17:29:58Z
dc.date.available2021-10-16T17:29:58Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12484
dc.sourceIIOimport
dc.titleMechanism of O2-anneal induced Vfb shifts of Ru gated stacks
dc.typeJournal article
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewno
dc.source.beginpage518
dc.source.endpage520
dc.source.journalMicroelectronics Reliability
dc.source.issue4_5
dc.source.volume47
imec.availabilityPublished - imec
imec.internalnotesPaper from WoDiM 2006


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