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Forming gas anneal induced flat-band voltage shift of metal-oxide-semiconductor stacks and its link with hydrogen incorporation in metal gates

dc.contributor.authorLi, Zilan
dc.contributor.authorSchram, Tom
dc.contributor.authorPantisano, Luigi
dc.contributor.authorWitters, Thomas
dc.contributor.authorStesmans, Andre
dc.contributor.authorAkheyar, Amal
dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorYamada, Naoki
dc.contributor.authorTsunoda, Takaaki
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-16T17:30:22Z
dc.date.available2021-10-16T17:30:22Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12485
dc.sourceIIOimport
dc.titleForming gas anneal induced flat-band voltage shift of metal-oxide-semiconductor stacks and its link with hydrogen incorporation in metal gates
dc.typeJournal article
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorWitters, Thomas
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage2213
dc.source.endpage2216
dc.source.journalMicroelectronic Engineering
dc.source.issue9_10
dc.source.volume84
imec.availabilityPublished - open access


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