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dc.contributor.authorLombardo, S.
dc.contributor.authorGerardi, C.
dc.contributor.authorBreuil, Laurent
dc.contributor.authorJahan, C.
dc.contributor.authorPerniola, L.
dc.contributor.authorCina, G.
dc.contributor.authorCorso, D.
dc.contributor.authorTripiciano, E.
dc.contributor.authorAncarani, V.
dc.contributor.authorIannoccone, G.
dc.contributor.authorBongiorno, C.
dc.contributor.authorGarozzo, C.
dc.contributor.authorBarbera, P.
dc.contributor.authorNowak, E.
dc.contributor.authorPuglisi, R.
dc.contributor.authorCosta, G.A.
dc.contributor.authorCoccorese, C.
dc.contributor.authorVecchio, M.
dc.contributor.authorRimini, E.
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorDe Salvo, B.
dc.contributor.authorMelanotte, M.
dc.date.accessioned2021-10-16T17:36:39Z
dc.date.available2021-10-16T17:36:39Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12507
dc.sourceIIOimport
dc.titleAdvantages of the FinFET architecture in SONOS and nanocrystal memory devices
dc.typeProceedings paper
dc.contributor.imecauthorBreuil, Laurent
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecBreuil, Laurent::0000-0003-2869-1651
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage921
dc.source.endpage924
dc.source.conferenceTechnical Digest International Electron Devices Meeting - IEDM
dc.source.conferencedate10/12/2007
dc.source.conferencelocationWashington, DC USA
imec.availabilityPublished - open access


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