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Selective epitaxial Si/SiGe growth for VT shift adjustment in high k pMOS devices

dc.contributor.authorLoo, Roger
dc.contributor.authorSorada, Haruyuki
dc.contributor.authorInoue, Akira
dc.contributor.authorLee, B.C
dc.contributor.authorHyun, Sangjin
dc.contributor.authorJakschik, Stefan
dc.contributor.authorLujan, Guilherme
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-16T17:37:29Z
dc.date.available2021-10-16T17:37:29Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12510
dc.sourceIIOimport
dc.titleSelective epitaxial Si/SiGe growth for VT shift adjustment in high k pMOS devices
dc.typeJournal article
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpageS110
dc.source.endpageS113
dc.source.journalSemiconductor Science and Technology
dc.source.issue1
dc.source.volume22
imec.availabilityPublished - open access


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