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Schottky barrier height lowering by an increase of the substrate doping in PtSi Schottky barrier source/drain FETs

dc.contributor.authorLousberg, Gregory
dc.contributor.authorYu, HongYu
dc.contributor.authorFroment, Benoit
dc.contributor.authorAugendre, Emmanuel
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorLauwers, Anne
dc.contributor.authorLi, M.F.
dc.contributor.authorAbsil, Philippe
dc.contributor.authorJurczak, Gosia
dc.contributor.authorBiesemans, Serge
dc.date.accessioned2021-10-16T17:39:35Z
dc.date.available2021-10-16T17:39:35Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12517
dc.sourceIIOimport
dc.titleSchottky barrier height lowering by an increase of the substrate doping in PtSi Schottky barrier source/drain FETs
dc.typeJournal article
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.source.peerreviewno
dc.source.beginpage123
dc.source.endpage125
dc.source.journalIEEE Electron Device Letters
dc.source.issue2
dc.source.volume28
imec.availabilityPublished - imec


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