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Spin-orbit interction in a 2DEG in a InAs/AlSb quantum tunnel well with gate-controlled electron density

dc.contributor.authorHeida, J. P.
dc.contributor.authorvan Wees, B. J.
dc.contributor.authorKlapwijk, T. M.
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-09-29T14:32:48Z
dc.date.available2021-09-29T14:32:48Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1251
dc.sourceIIOimport
dc.titleSpin-orbit interction in a 2DEG in a InAs/AlSb quantum tunnel well with gate-controlled electron density
dc.typeProceedings paper
dc.contributor.imecauthorBorghs, Gustaaf
dc.source.peerreviewno
dc.source.beginpage2467
dc.source.endpage70
dc.source.conferenceProceedings of the 23rd International Conference on the Physics of Semiconductors; 21-26 July 1996; Berlin, Germany.
dc.source.conferencelocation
imec.availabilityPublished - imec


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