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dc.contributor.authorMachkaoutsan, Vladimir
dc.contributor.authorMertens, Sofie
dc.contributor.authorBauer, R.
dc.contributor.authorLauwers, Anne
dc.contributor.authorVerheyden, Kurt
dc.contributor.authorVanormelingen, Koen
dc.contributor.authorVerheyen, Peter
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.authorJakschik, Stefan
dc.contributor.authorTheodore, D.
dc.contributor.authorAbsil, Philippe
dc.contributor.authorThomas, S.
dc.contributor.authorGranneman, E.H.A.
dc.date.accessioned2021-10-16T17:43:20Z
dc.date.available2021-10-16T17:43:20Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12530
dc.sourceIIOimport
dc.titleImproved thermal stability of Ni-silicides on Si:C epitaxial layers
dc.typeJournal article
dc.contributor.imecauthorMachkaoutsan, Vladimir
dc.contributor.imecauthorMertens, Sofie
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.orcidimecMertens, Sofie::0000-0002-1482-6730
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage2542
dc.source.endpage2546
dc.source.journalMicroelectronic Engineering
dc.source.volume84
imec.availabilityPublished - open access
imec.internalnotesMaterials for Advanced Metalization - MAM


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