Show simple item record

Impact of Hf-precursor choice on scaling and performance of high-k gate dielectrics

dc.contributor.authorMaes, Jan
dc.contributor.authorFedorenko, Yanina
dc.contributor.authorDelabie, Annelies
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorSwerts, Johan
dc.contributor.authorNyns, Laura
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorWang, C.
dc.contributor.authorWilk, G.
dc.date.accessioned2021-10-16T17:45:30Z
dc.date.available2021-10-16T17:45:30Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12537
dc.sourceIIOimport
dc.titleImpact of Hf-precursor choice on scaling and performance of high-k gate dielectrics
dc.typeProceedings paper
dc.contributor.imecauthorMaes, Jan
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorSwerts, Johan
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage59
dc.source.endpage72
dc.source.conferencePhysics and Technology of High-k Gate Dielectrics 5
dc.source.conferencedate7/10/2007
dc.source.conferencelocationWashington, DC USA
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol.11, issue 4


Files in this item

Thumbnail
Name:
15699.pdf
Size:
374.9Kb
Format:
PDF
View/open

This item appears in the following collection(s)

Show simple item record