dc.contributor.author | Maes, Jan | |
dc.contributor.author | Fedorenko, Yanina | |
dc.contributor.author | Delabie, Annelies | |
dc.contributor.author | Ragnarsson, Lars-Ake | |
dc.contributor.author | Swerts, Johan | |
dc.contributor.author | Nyns, Laura | |
dc.contributor.author | Van Elshocht, Sven | |
dc.contributor.author | Wang, C. | |
dc.contributor.author | Wilk, G. | |
dc.date.accessioned | 2021-10-16T17:45:30Z | |
dc.date.available | 2021-10-16T17:45:30Z | |
dc.date.issued | 2007 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/12537 | |
dc.source | IIOimport | |
dc.title | Impact of Hf-precursor choice on scaling and performance of high-k gate dielectrics | |
dc.type | Proceedings paper | |
dc.contributor.imecauthor | Maes, Jan | |
dc.contributor.imecauthor | Delabie, Annelies | |
dc.contributor.imecauthor | Ragnarsson, Lars-Ake | |
dc.contributor.imecauthor | Swerts, Johan | |
dc.contributor.imecauthor | Nyns, Laura | |
dc.contributor.imecauthor | Van Elshocht, Sven | |
dc.contributor.orcidimec | Ragnarsson, Lars-Ake::0000-0003-1057-8140 | |
dc.contributor.orcidimec | Nyns, Laura::0000-0001-8220-870X | |
dc.contributor.orcidimec | Van Elshocht, Sven::0000-0002-6512-1909 | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | no | |
dc.source.beginpage | 59 | |
dc.source.endpage | 72 | |
dc.source.conference | Physics and Technology of High-k Gate Dielectrics 5 | |
dc.source.conferencedate | 7/10/2007 | |
dc.source.conferencelocation | Washington, DC USA | |
imec.availability | Published - open access | |
imec.internalnotes | ECS Transactions; Vol.11, issue 4 | |