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Fermi-level pinning at polycrystalline silicon-HfO2 interface as a source of drain and gate current 1/f noise

dc.contributor.authorMagnone, Paolo
dc.contributor.authorCrupi, Felice
dc.contributor.authorPantisano, Luigi
dc.contributor.authorPace, Calogero
dc.date.accessioned2021-10-16T17:46:04Z
dc.date.available2021-10-16T17:46:04Z
dc.date.issued2007-02
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12539
dc.sourceIIOimport
dc.titleFermi-level pinning at polycrystalline silicon-HfO2 interface as a source of drain and gate current 1/f noise
dc.typeJournal article
dc.source.peerreviewno
dc.source.beginpage73507
dc.source.journalApplied Physics Letters
dc.source.issue7
dc.source.volume90
imec.availabilityPublished - imec


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