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dc.contributor.authorMantl, S.
dc.contributor.authorBuca, D.
dc.contributor.authorZhao, Q.T.
dc.contributor.authorHollaender, B.
dc.contributor.authorFeste, S.
dc.contributor.authorLuysberg, M.
dc.contributor.authorReiche, M.
dc.contributor.authorGösele, U.
dc.contributor.authorBuchholtz, W.
dc.contributor.authorWei, A.
dc.contributor.authorHorstmann, M.
dc.contributor.authorLoo, Roger
dc.contributor.authorNguyen, Duy
dc.date.accessioned2021-10-16T17:48:34Z
dc.date.available2021-10-16T17:48:34Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12548
dc.sourceIIOimport
dc.titleLarge current enhancement in n-MOSFETs with strained Si on insulator
dc.typeProceedings paper
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.conferenceInternational Semiconductor Device Research Symposium - ISDRS
dc.source.conferencedate12/12/2007
dc.source.conferencelocationCollege Park, MD USA
imec.availabilityPublished - open access


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