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Large current enhancement in n-MOSFETs with strained Si on insulator

dc.contributor.authorMantl, S.
dc.contributor.authorBuca, D.
dc.contributor.authorZhao, Q.T.
dc.contributor.authorHollaender, B.
dc.contributor.authorFeste, S.
dc.contributor.authorLuysberg, M.
dc.contributor.authorReiche, M.
dc.contributor.authorGösele, U.
dc.contributor.authorBuchholtz, W.
dc.contributor.authorWei, A.
dc.contributor.authorHorstmann, M.
dc.contributor.authorLoo, Roger
dc.contributor.authorNguyen, Duy
dc.date.accessioned2021-10-16T17:48:34Z
dc.date.available2021-10-16T17:48:34Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12548
dc.sourceIIOimport
dc.titleLarge current enhancement in n-MOSFETs with strained Si on insulator
dc.typeProceedings paper
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.conferenceInternational Semiconductor Device Research Symposium - ISDRS
dc.source.conferencedate12/12/2007
dc.source.conferencelocationCollege Park, MD USA
imec.availabilityPublished - open access


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