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Electrical characterization of leaky charge-trapping high-k MOS devices using pulsed Q-V

dc.contributor.authorMartens, Koen
dc.contributor.authorRosmeulen, Maarten
dc.contributor.authorKaczer, Ben
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorMaes, Herman
dc.date.accessioned2021-10-16T17:51:42Z
dc.date.available2021-10-16T17:51:42Z
dc.date.issued2007-05
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12559
dc.sourceIIOimport
dc.titleElectrical characterization of leaky charge-trapping high-k MOS devices using pulsed Q-V
dc.typeJournal article
dc.contributor.imecauthorMartens, Koen
dc.contributor.imecauthorRosmeulen, Maarten
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecMartens, Koen::0000-0001-7135-5536
dc.contributor.orcidimecRosmeulen, Maarten::0000-0002-3663-7439
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.source.peerreviewno
dc.source.beginpage436
dc.source.endpage439
dc.source.journalIEEE Electron Device Letters
dc.source.issue5
dc.source.volume2007
imec.availabilityPublished - imec


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