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Demonstration of asymmetric gate-oxide thickness four-terminal FinFETs having flexible threshold voltage and good subthreshold slope

dc.contributor.authorMasahara, Meishoku
dc.contributor.authorSurdeanu, Radu
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorDoornbos, Gerben
dc.contributor.authorNguyen Hoang, Viet
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorVrancken, Christa
dc.contributor.authorDevriendt, Katia
dc.contributor.authorNeuilly, Francois
dc.contributor.authorKunnen, Eddy
dc.contributor.authorJurczak, Gosia
dc.contributor.authorBiesemans, Serge
dc.date.accessioned2021-10-16T17:53:26Z
dc.date.available2021-10-16T17:53:26Z
dc.date.issued2007-03
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12564
dc.sourceIIOimport
dc.titleDemonstration of asymmetric gate-oxide thickness four-terminal FinFETs having flexible threshold voltage and good subthreshold slope
dc.typeJournal article
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorDoornbos, Gerben
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorVrancken, Christa
dc.contributor.imecauthorDevriendt, Katia
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecDevriendt, Katia::0000-0002-0662-7926
dc.source.peerreviewno
dc.source.beginpage217
dc.source.endpage219
dc.source.journalIEEE Electron Device Letters
dc.source.issue3
dc.source.volume28
imec.availabilityPublished - imec


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