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High mobility strained Ge pMOSFETs with high-k/metal gate

dc.contributor.authorNicholas, Gareth
dc.contributor.authorGrasby, T.J.
dc.contributor.authorFulgoni, D.J.F.
dc.contributor.authorBeer, C.S.
dc.contributor.authorParsons, J.
dc.contributor.authorMeuris, Marc
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-16T18:10:42Z
dc.date.available2021-10-16T18:10:42Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12620
dc.sourceIIOimport
dc.titleHigh mobility strained Ge pMOSFETs with high-k/metal gate
dc.typeJournal article
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage825
dc.source.endpage827
dc.source.journalIEEE Electron Device Letters
dc.source.issue9
dc.source.volume28
imec.availabilityPublished - open access


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