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Analysis of As, P diffusion and defect evolution during sub-millisecond non-melt laser annealing based on an atomistic kinetic Monte Carlo approach

dc.contributor.authorNoda, Taiji
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorFelch, S.
dc.contributor.authorParihar, V.
dc.contributor.authorCuperus, Aldert
dc.contributor.authorMcintosh, R.
dc.contributor.authorVrancken, Christa
dc.contributor.authorRosseel, Erik
dc.contributor.authorBender, Hugo
dc.contributor.authorVan Daele, Benny
dc.contributor.authorNiwa, Masaaki
dc.contributor.authorUmimoto, H.
dc.contributor.authorSchreutelkamp, Rob
dc.contributor.authorAbsil, Philippe
dc.contributor.authorJurczak, Gosia
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorBiesemans, Serge
dc.contributor.authorHoffmann, Thomas Y.
dc.date.accessioned2021-10-16T18:12:13Z
dc.date.available2021-10-16T18:12:13Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12624
dc.sourceIIOimport
dc.titleAnalysis of As, P diffusion and defect evolution during sub-millisecond non-melt laser annealing based on an atomistic kinetic Monte Carlo approach
dc.typeProceedings paper
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorVrancken, Christa
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorBiesemans, Serge
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage955
dc.source.endpage958
dc.source.conferenceTechnical Digest International Electron Devices Meeting - IEDM
dc.source.conferencedate10/12/2007
dc.source.conferencelocationWashington, DC USA
imec.availabilityPublished - open access


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