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Electron energy dependence of defect generation in high-k gate stacks

dc.contributor.authorO'Connor, Robert
dc.contributor.authorPantisano, Luigi
dc.contributor.authorDegraeve, Robin
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorKaczer, Ben
dc.contributor.authorRoussel, Philippe
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-16T18:14:26Z
dc.date.available2021-10-16T18:14:26Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12631
dc.sourceIIOimport
dc.titleElectron energy dependence of defect generation in high-k gate stacks
dc.typeOral presentation
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.source.peerreviewno
dc.source.conference38th IEEE Semiconductor Interface Specialists Conference
dc.source.conferencedate5/12/2007
dc.source.conferencelocationWashington, DC USA
imec.availabilityPublished - imec


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