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Effect of gate interface on performance degration of irradiated SiC-MESFET

dc.contributor.authorOhyama, H.
dc.contributor.authorTakakura, K.
dc.contributor.authorYoneoka, M.
dc.contributor.authorUemura, K.
dc.contributor.authorMotoki, M.
dc.contributor.authorMatsuo, K.
dc.contributor.authorArai, M.
dc.contributor.authorKuboyama, S.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-16T18:16:09Z
dc.date.available2021-10-16T18:16:09Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12636
dc.sourceIIOimport
dc.titleEffect of gate interface on performance degration of irradiated SiC-MESFET
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage37
dc.source.endpage40
dc.source.journalPhysica B
dc.source.volume401-402
imec.availabilityPublished - open access


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