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Reduced self-heating by strained silicon substrate engineering

dc.contributor.authorO'Neill, A.
dc.contributor.authorOlsen, S.
dc.contributor.authorYang, Y.
dc.contributor.authorAgaiby, R.
dc.contributor.authorHellstrom, P.E.
dc.contributor.authorOstling, M.
dc.contributor.authorLyutovich, K.
dc.contributor.authorKasper, E.
dc.contributor.authorEneman, Geert
dc.contributor.authorVerheyen, Peter
dc.contributor.authorLoo, Roger
dc.contributor.authorClaeys, Cor
dc.contributor.authorFiegna, C.
dc.contributor.authorSangiorgio, E.
dc.date.accessioned2021-10-16T18:18:21Z
dc.date.available2021-10-16T18:18:21Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12643
dc.sourceIIOimport
dc.titleReduced self-heating by strained silicon substrate engineering
dc.typeMeeting abstract
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.conference5th International Symposium on Control of Semiconductor Interfaces - ISCSI-V
dc.source.conferencedate12/11/2007
dc.source.conferencelocationTokyo Japan
imec.availabilityPublished - open access


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