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Reduced self-heating by strained silicon substrate engineering

dc.contributor.authorO'Neill, A.
dc.contributor.authorOlsen, S.
dc.contributor.authorYang, Y.
dc.contributor.authorAgaiby, R.
dc.contributor.authorHellstrom, P.E
dc.contributor.authorOstling, M.
dc.contributor.authorLyutovich, K.
dc.contributor.authorKasper, E.
dc.contributor.authorEneman, Geert
dc.contributor.authorVerheyen, Peter
dc.contributor.authorLoo, Roger
dc.contributor.authorClaeys, Cor
dc.contributor.authorFiegna, C.
dc.contributor.authorSangiorgi, E.
dc.date.accessioned2021-10-16T18:18:43Z
dc.date.available2021-10-16T18:18:43Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12644
dc.sourceIIOimport
dc.titleReduced self-heating by strained silicon substrate engineering
dc.typeMeeting abstract
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.conference3rd International Workshop on New Group IV Semiconductor Nanoelectronics
dc.source.conferencedate8/11/2007
dc.source.conferencelocationSendai Japan
imec.availabilityPublished - open access


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