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Stress in silicon due to the formation of self aligned poly-CoSi2 lines studied by micro-Raman spectroscopy

dc.contributor.authorHoward, Dave
dc.contributor.authorDe Wolf, Ingrid
dc.contributor.authorBender, Hugo
dc.contributor.authorMaex, Karen
dc.date.accessioned2021-09-29T14:34:39Z
dc.date.available2021-09-29T14:34:39Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1265
dc.sourceIIOimport
dc.titleStress in silicon due to the formation of self aligned poly-CoSi2 lines studied by micro-Raman spectroscopy
dc.typeProceedings paper
dc.contributor.imecauthorDe Wolf, Ingrid
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorMaex, Karen
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage251
dc.source.endpage256
dc.source.conferenceSilicide Thin Films - Fabrication, Properties, and Applications
dc.source.conferencedate27/11/1995
dc.source.conferencelocationBoston, MA USA
imec.availabilityPublished - open access
imec.internalnotesMRS Symposium Proceedings; Vol. 402


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