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Charge characterisation in metal-gate/high-k layers: Effect of post-deposition annealing and gate electrode

dc.contributor.authorO'Sullivan, Barry
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorKaushik, Vidya
dc.contributor.authorSchram, Tom
dc.contributor.authorKittl, Jorge
dc.contributor.authorPantisano, Luigi
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-16T18:24:17Z
dc.date.available2021-10-16T18:24:17Z
dc.date.issued2007-07
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12661
dc.sourceIIOimport
dc.titleCharge characterisation in metal-gate/high-k layers: Effect of post-deposition annealing and gate electrode
dc.typeJournal article
dc.contributor.imecauthorO'Sullivan, Barry
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecO'Sullivan, Barry::0000-0002-9036-8241
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewno
dc.source.beginpage33502
dc.source.journalApplied Physics Letters
dc.source.issue3
dc.source.volume91
imec.availabilityPublished - imec


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