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Evaluation of triple-gate FinFETs with SiO2-HfO2-TiN gate stack under analog operation

dc.contributor.authorPavanello, M.A.
dc.contributor.authorMartino, J.A.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorRooyackers, Rita
dc.contributor.authorCollaert, Nadine
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-16T18:29:58Z
dc.date.available2021-10-16T18:29:58Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12679
dc.sourceIIOimport
dc.titleEvaluation of triple-gate FinFETs with SiO2-HfO2-TiN gate stack under analog operation
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage285
dc.source.endpage291
dc.source.journalSolid-State Electronics
dc.source.issue2
dc.source.volume51
imec.availabilityPublished - open access
imec.internalnotesPaper from EUROSOI 2006


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