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Influence of lateral device scaling and airgap deep trench isolation on reliability performance of 200GHz SiGe:C HBTs

dc.contributor.authorPiontek, Andreas
dc.contributor.authorVanhoucke, T.
dc.contributor.authorVan Huylenbroeck, Stefaan
dc.contributor.authorChoi, Li Jen
dc.contributor.authorHurkx, G.A.M.
dc.contributor.authorHijzen, E.
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-16T18:40:33Z
dc.date.available2021-10-16T18:40:33Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12713
dc.sourceIIOimport
dc.titleInfluence of lateral device scaling and airgap deep trench isolation on reliability performance of 200GHz SiGe:C HBTs
dc.typeJournal article
dc.contributor.imecauthorVan Huylenbroeck, Stefaan
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecVan Huylenbroeck, Stefaan::0000-0001-9978-3575
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewno
dc.source.beginpageS9
dc.source.endpageS12
dc.source.journalSemiconductor Science and Technology
dc.source.issue1
dc.source.volume22
imec.availabilityPublished - imec


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