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Impact of Si channel thickness and buried oxide quality on the proton radiation behavior of 65 nm FD SOI

dc.contributor.authorPut, Sofie
dc.contributor.authorSimoen, Eddy
dc.contributor.authorAugendre, Emmanuel
dc.contributor.authorClaeys, Cor
dc.contributor.authorVan Uffelen, Marco
dc.contributor.authorLeroux, Paul
dc.date.accessioned2021-10-16T18:49:37Z
dc.date.available2021-10-16T18:49:37Z
dc.date.issued2007-01
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12741
dc.sourceIIOimport
dc.titleImpact of Si channel thickness and buried oxide quality on the proton radiation behavior of 65 nm FD SOI
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage23
dc.source.endpage24
dc.source.conferenceEUROSOI Workshop Proceedings: 3rd Workshop of the Thematic Network on Silicon-on-Insulator Technology, Devices and Circuits
dc.source.conferencedate24/01/2007
dc.source.conferencelocationLeuven Belgium
imec.availabilityPublished - imec


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