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In-situ recovery of the base current of SiGe NPN HBTs at high gamma dose levels

dc.contributor.authorPut, Sofie
dc.contributor.authorSimoen, Eddy
dc.contributor.authorVan Huylenbroeck, Stefaan
dc.contributor.authorClaeys, Cor
dc.contributor.authorVan Uffelen, M.
dc.contributor.authorLeroux, P.
dc.contributor.authorBerghmans, F.
dc.date.accessioned2021-10-16T18:50:19Z
dc.date.available2021-10-16T18:50:19Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12743
dc.sourceIIOimport
dc.titleIn-situ recovery of the base current of SiGe NPN HBTs at high gamma dose levels
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorVan Huylenbroeck, Stefaan
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecVan Huylenbroeck, Stefaan::0000-0001-9978-3575
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage452
dc.source.endpage456
dc.source.conferenceWorkshop on Semiconductor Advances for Future Electronics and Sensors - SAFE
dc.source.conferencedate29/11/2007
dc.source.conferencelocationVeldhoven the Netherlands
imec.availabilityPublished - open access


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